Dose rate effects during damage accumulation in silicon

Materials Research Society Symposium - Proceedings

Volumn 439, Issue , 1997, Pages 125-129

  Caturla, M J ^a   Diaz de la Rubia, T ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; ION BOMBARDMENT; MOLECULAR DYNAMICS; MONTE CARLO METHODS; THERMAL EFFECTS;

DOSE RATES; INTERCASCADE ANNIHILATION;

SEMICONDUCTING SILICON;

EID: 0030719076     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)