SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of Crystal Growth

Volumn 188, Issue 1-4, 1998, Pages 197-204

Nanoscale Si selective homoepitaxial growth observed by scanning tunneling microscopy

(3) Fujita, K a,b Watanabe, H a,c Ichikawa, M a

a JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

b OKI ELECTRIC INDUSTRY CO (Japan)

c NEC CORPORATION (Japan)

Author keywords

Chemical beam epitaxy; Faceting; Scanning tunneling microscopy; Silane; Silicon; Silicon oxide

Indexed keywords

CHEMICAL BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SILANES; SILICA; THERMOOXIDATION;

DISILANES; SELECTIVE EPITAXIAL GROWTH;

SEMICONDUCTING SILICON;

EID: 0032099593 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00054-2 Document Type: Article

Times cited : (3)

References (22)

1
- 0000144910
- S. Fujita, S. Maruno, H. Watanabe, M. Ichikawa, Appl. Phys. Lett. 69 (1996) 638.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 638
- Fujita, S.¹ Maruno, S.² Watanabe, H.³ Ichikawa, M.⁴

2
- 0031146065
- S. Fujita, S. Maruno, H. Watanabe, M. Ichikawa, J. Vac. Sci. Technol. A 15 (1997) 1493.
- (1997) J. Vac. Sci. Technol. A , vol.15 , pp. 1493
- Fujita, S.¹ Maruno, S.² Watanabe, H.³ Ichikawa, M.⁴

3
- 36549101448
- H. Hirayama, T. Tatsumi, N. Aizaki, Appl. Phys. Lett. 52 (1988) 2242.
- (1988) Appl. Phys. Lett. , vol.52 , pp. 2242
- Hirayama, H.¹ Tatsumi, T.² Aizaki, N.³

4
- 0000086551
- T. Hasegawa, M. Kohno, S. Hosaka, S. Hosoki, Phys. Rev. B 48 (1993) 1943.
- (1993) Phys. Rev. B , vol.48 , pp. 1943
- Hasegawa, T.¹ Kohno, M.² Hosaka, S.³ Hosoki, S.⁴

5
- 0041856417
- J. Arai, N. Usami, K. Ota, Y. Shiraki, A. Ohga, T. Hattori, Appl. Phys. Lett. 70 (1997) 2981.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2981
- Arai, J.¹ Usami, N.² Ota, K.³ Shiraki, Y.⁴ Ohga, A.⁵ Hattori, T.⁶

6
- 84957282281
- M. Liehr, J.E. Lewis, G.W. Rubloff, J. Vac. Sci. Technol. A 5 (1987) 1559.
- (1987) J. Vac. Sci. Technol. A , vol.5 , pp. 1559
- Liehr, M.¹ Lewis, J.E.² Rubloff, G.W.³

7
- 84912955385
- Y. Kobayashi, K. Sugii, J. Vac. Sci. Technol. A 10 (1992) 2308.
- (1992) J. Vac. Sci. Technol. A , vol.10 , pp. 2308
- Kobayashi, Y.¹ Sugii, K.²

8
- 0000399843
- K.E. Johnson, T. Engel, Phys. Rev. Lett. 69 (1992) 339.
- (1992) Phys. Rev. Lett. , vol.69 , pp. 339
- Johnson, K.E.¹ Engel, T.²

9
- 0031143316
- K. Fujita, Y. Kusumi, M. Ichikawa, Surf. Sci. 380 (1997) 66.
- (1997) Surf. Sci. , vol.380 , pp. 66
- Fujita, K.¹ Kusumi, Y.² Ichikawa, M.³

10
- 0000439330
- H. Watanabe, K. Fujita, M. Ichikawa, Appl. Phys. Lett. 70 (1997) 1095.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1095
- Watanabe, H.¹ Fujita, K.² Ichikawa, M.³

11
- 0040858723
- K. Fujita, H. Watanabe, M. Ichikawa, Appl. Phys. Lett. 70 (1997) 2807.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2807
- Fujita, K.¹ Watanabe, H.² Ichikawa, M.³

12
- 0031998743
- K. Fujita, H. Watanabe, M. Ichikawa, Surf. Sci. 398 (1998) 134.
- (1998) Surf. Sci. , vol.398 , pp. 134
- Fujita, K.¹ Watanabe, H.² Ichikawa, M.³

13
- 0004005306
- Wiley, New York
- S.M. Sze, Physics of Semiconductor Devices, 2nd ed., p. 395, Wiley, New York.
- Physics of Semiconductor Devices, 2nd Ed. , pp. 395
- Sze, S.M.¹

14
- 0000675185
- R. Imbihl, J.E. Demuth, S.M. Gates, B.A. Scott, Phys. Rev. B 39 (1989) 5222.
- (1989) Phys. Rev. B , vol.39 , pp. 5222
- Imbihl, R.¹ Demuth, J.E.² Gates, S.M.³ Scott, B.A.⁴

15
- 0000241211
- Ph. Avouris, F. Bozso, J. Phys. Chem. 94 (1990) 2243.
- (1990) J. Phys. Chem. , vol.94 , pp. 2243
- Avouris, Ph.¹ Bozso, F.²

16
- 24544453940
- D.J. Chadi, Phys. Rev. Lett. 59 (1987) 1691.
- (1987) Phys. Rev. Lett. , vol.59 , pp. 1691
- Chadi, D.J.¹

17
- 84912945447
- A.J. Hoeven, D. Dijkkamp, E.J. van Loenen, J.M. Lenssinck, J. Dieleman, J. Vac. Sci. Technol. A 8 (1990) 207.
- (1990) J. Vac. Sci. Technol. A , vol.8 , pp. 207
- Hoeven, A.J.¹ Dijkkamp, D.² Van Loenen, E.J.³ Lenssinck, J.M.⁴ Dieleman, J.⁵

18
- 0004203824
- H. Hirayama, M. Hiroi, T. Ide, Phys. Rev. B 48 (1993) 17331.
- (1993) Phys. Rev. B , vol.48 , pp. 17331
- Hirayama, H.¹ Hiroi, M.² Ide, T.³

19
- 11944275382
- A. Oshiyama, Phys. Rev. Lett. 74 (1995) 130.
- (1995) Phys. Rev. Lett. , vol.74 , pp. 130
- Oshiyama, A.¹

20
- 84986685577
- E.J. van Loenen, D. Dijkkamp, A.J. Hoeven, J. Microscopy 152 (1988) 487.
- (1988) J. Microscopy , vol.152 , pp. 487
- Van Loenen, E.J.¹ Dijkkamp, D.² Hoeven, A.J.³

21
- 0001746259
- W.E. Packard, J.D. Dow, Phys. Rev. B 55 (1997) 15643.
- (1997) Phys. Rev. B , vol.55 , pp. 15643
- Packard, W.E.¹ Dow, J.D.²

22
- 0028444784
- Y. Yamamoto, Surf. Sci. 313 (1994) 155.
- (1994) Surf. Sci. , vol.313 , pp. 155
- Yamamoto, Y.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.