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Surface Science

Volumn 398, Issue 1-2, 1998, Pages 134-142

Void formation during thermal decomposition of ultrathin oxide layers on the Si(110) surface

(3) Fujita, Ken a Watanabe, Heiji a Ichikawa, Masakazu a

a JT RES CENTER FOR ATOM TECHNOLOGY (Japan)

Author keywords

Faceting; Growth; Scanning tunneling microscopy; Silicon; Silicon oxide

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; FILM GROWTH; PYROLYSIS; SCANNING TUNNELING MICROSCOPY; SILICON COMPOUNDS; SURFACE PHENOMENA; ULTRATHIN FILMS;

SILICON OXIDE;

SILICON;

EID: 0031998743 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)80018-6 Document Type: Article

Times cited : (12)

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