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Volumn 13, Issue 5, 1992, Pages 253-255

Negative Base Current and Impact Ionization Phenomena in AlGaAs/GaAs HBT's

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; IONIZATION; MATHEMATICAL STATISTICS - MONTE CARLO METHODS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE - CHARGE CARRIERS;

EID: 0026867535     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.145044     Document Type: Article
Times cited : (24)

References (13)
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  • 3
    • 0024683097 scopus 로고
    • Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors
    • P.-F. Lu and T.-C. Chen, “Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, no. 6, pp. 1182–1188, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.6 , pp. 1182-1188
    • Lu, P.F.1    Chen, T.C.2
  • 4
    • 0025405183 scopus 로고
    • Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors
    • P.-F. Lu, “Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors,” IEEE Trans. Electron Devices, vol. 37, no. 3, pp. 762–767, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.3 , pp. 762-767
    • Lu, P.F.1
  • 5
    • 0025379167 scopus 로고
    • Carrier multiplication and avalanche breakdown in self-aligned bipolar transistors
    • M. Reisch, “Carrier multiplication and avalanche breakdown in self-aligned bipolar transistors,” Solid-State Electron., vol. 33, no. 2, pp. 189–197, 1990.
    • (1990) Solid-State Electron. , vol.33 , Issue.2 , pp. 189-197
    • Reisch, M.1
  • 6
    • 0025670991 scopus 로고
    • Characteristics of AlGaAs/GaAs thin emitter heterojunction bipolar transistors
    • L. M. Lunardi et al., “Characteristics of AlGaAs/GaAs thin emitter heterojunction bipolar transistors,” Proc. SPIE (High-Speed Electronics and Device Scaling), vol. 1288, pp. 44–56, 1990.
    • (1990) Proc. SPIE (High-Speed Electronics and Device Scaling) , vol.1288 , pp. 44-56
    • Lunardi, L.M.1
  • 7
    • 0026203454 scopus 로고
    • Characteristics of impact-ionization current in the advanced self-aligned polysilicon emitter bipolar transistor
    • T. M. Liu, T. Y. Chiu, V. D. Archer, and H. H. Kim, “Characteristics of impact-ionization current in the advanced self-aligned polysilicon emitter bipolar transistor,” IEEE Trans. Electron Devices, vol. 38, no. 8, pp. 1845–1851, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.8 , pp. 1845-1851
    • Liu, T.M.1    Chiu, T.Y.2    Archer, V.D.3    Kim, H.H.4
  • 8
    • 0025066050 scopus 로고
    • An avalanche multiplication model for bipolar transistors
    • J. J. Liou and J. S. Yuan, “An avalanche multiplication model for bipolar transistors,” Solid-State Electron., vol. 33, no. 1, pp. 35–38, 1990.
    • (1990) Solid-State Electron. , vol.33 , Issue.1 , pp. 35-38
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  • 10
    • 0022152203 scopus 로고
    • The determination of impact ionization coefficients in (100) gallium arsenide by noise and photocurrent multiplication measurements
    • G. E. Bulman, V. M. Robbins, and G. E. Stillman, “The determination of impact ionization coefficients in (100) gallium arsenide by noise and photocurrent multiplication measurements,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2454–2466, 1985.
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  • 11
    • 0025576799 scopus 로고
    • The impact of nonequilibrium transport on breakdown and transit time in bipolar transistors
    • E. F. Crabbé, J. M. C. Stork, G. Baccarani, M. V. Fischetti, and S. E. Laux, “The impact of nonequilibrium transport on breakdown and transit time in bipolar transistors,” in IEDM Tech. Dig., 1990, pp. 463-466.
    • (1990) IEDM Tech. Dig. , pp. 463-466
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.