-
1
-
-
0024751372
-
Breakdown behavior of GaAs/AlGaAs HBT's
-
J. J. Chen, G.-B. Gao, J.-I. Chyi, and H. Morkoç, “Breakdown behavior of GaAs/AlGaAs HBT's,” IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2165–2172, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, Issue.10
, pp. 2165-2172
-
-
Chen, J.J.1
Gao, G.B.2
Chyi, J.I.3
Morkoç, H.4
-
2
-
-
0024646776
-
Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters
-
K. Horio, Y. Iwatsu, and H. Yanai, “Numerical simulation of AlGaAs/GaAs heterojunction bipolar transistors with various collector parameters,” IEEE Trans. Electron Devices, vol. 36, no. 4, pp. 617–624, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, Issue.4
, pp. 617-624
-
-
Horio, K.1
Iwatsu, Y.2
Yanai, H.3
-
3
-
-
0024683097
-
Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors
-
P.-F. Lu and T.-C. Chen, “Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors,” IEEE Trans. Electron Devices, vol. 36, no. 6, pp. 1182–1188, 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, Issue.6
, pp. 1182-1188
-
-
Lu, P.F.1
Chen, T.C.2
-
4
-
-
0025405183
-
Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors
-
P.-F. Lu, “Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors,” IEEE Trans. Electron Devices, vol. 37, no. 3, pp. 762–767, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, Issue.3
, pp. 762-767
-
-
Lu, P.F.1
-
5
-
-
0025379167
-
Carrier multiplication and avalanche breakdown in self-aligned bipolar transistors
-
M. Reisch, “Carrier multiplication and avalanche breakdown in self-aligned bipolar transistors,” Solid-State Electron., vol. 33, no. 2, pp. 189–197, 1990.
-
(1990)
Solid-State Electron.
, vol.33
, Issue.2
, pp. 189-197
-
-
Reisch, M.1
-
6
-
-
0025670991
-
Characteristics of AlGaAs/GaAs thin emitter heterojunction bipolar transistors
-
L. M. Lunardi et al., “Characteristics of AlGaAs/GaAs thin emitter heterojunction bipolar transistors,” Proc. SPIE (High-Speed Electronics and Device Scaling), vol. 1288, pp. 44–56, 1990.
-
(1990)
Proc. SPIE (High-Speed Electronics and Device Scaling)
, vol.1288
, pp. 44-56
-
-
Lunardi, L.M.1
-
7
-
-
0026203454
-
Characteristics of impact-ionization current in the advanced self-aligned polysilicon emitter bipolar transistor
-
T. M. Liu, T. Y. Chiu, V. D. Archer, and H. H. Kim, “Characteristics of impact-ionization current in the advanced self-aligned polysilicon emitter bipolar transistor,” IEEE Trans. Electron Devices, vol. 38, no. 8, pp. 1845–1851, 1991.
-
(1991)
IEEE Trans. Electron Devices
, vol.38
, Issue.8
, pp. 1845-1851
-
-
Liu, T.M.1
Chiu, T.Y.2
Archer, V.D.3
Kim, H.H.4
-
8
-
-
0025066050
-
An avalanche multiplication model for bipolar transistors
-
J. J. Liou and J. S. Yuan, “An avalanche multiplication model for bipolar transistors,” Solid-State Electron., vol. 33, no. 1, pp. 35–38, 1990.
-
(1990)
Solid-State Electron.
, vol.33
, Issue.1
, pp. 35-38
-
-
Liou, J.J.1
Yuan, J.S.2
-
10
-
-
0022152203
-
The determination of impact ionization coefficients in (100) gallium arsenide by noise and photocurrent multiplication measurements
-
G. E. Bulman, V. M. Robbins, and G. E. Stillman, “The determination of impact ionization coefficients in (100) gallium arsenide by noise and photocurrent multiplication measurements,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2454–2466, 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 2454-2466
-
-
Bulman, G.E.1
Robbins, V.M.2
Stillman, G.E.3
-
11
-
-
0025576799
-
The impact of nonequilibrium transport on breakdown and transit time in bipolar transistors
-
E. F. Crabbé, J. M. C. Stork, G. Baccarani, M. V. Fischetti, and S. E. Laux, “The impact of nonequilibrium transport on breakdown and transit time in bipolar transistors,” in IEDM Tech. Dig., 1990, pp. 463-466.
-
(1990)
IEDM Tech. Dig.
, pp. 463-466
-
-
Crabbé, E.F.1
Stork, J.M.C.2
Baccarani, G.3
Fischetti, M.V.4
Laux, S.E.5
-
12
-
-
84941526030
-
-
private communication.
-
P. Lugli, private communication.
-
-
-
Lugli, P.1
-
13
-
-
84907835545
-
Numerical analysis of breakdown in silicon diodes
-
A. Heuberger, H. Ryssel, and P. Lange, Eds. Berlin: Springer-Verlag
-
W. Quade and M. Rudan, “Numerical analysis of breakdown in silicon diodes,” in Proc. ESSDERC, A. Heuberger, H. Ryssel, and P. Lange, Eds. Berlin: Springer-Verlag, 1989, pp. 97–100.
-
(1989)
Proc. ESSDERC
, pp. 97-100
-
-
Quade, W.1
Rudan, M.2
|