Breakdown-Speed Considerations in AlGaAs/GaAs Heterojunction Bipolar Transistors with Special Collector Designs

IEEE Transactions on Electron Devices

Volumn 39, Issue 12, 1992, Pages 2711-2719

  Chau, Hin Fai ^a   Hu, Juntao ^a   Pavlidis, Dimitris ^a   Tomizawa, Kazutaka ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

ALUMINUM GALLIUM ARSENIDE; COLLECTOR DESIGNS; HETEROJUNCTION BIPOLAR TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0026962835     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.168753     Document Type: Article

References (14)

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