Optimization of SiGe HBT Technology for High Speed Analog and Mixed-Signal Applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 71-74

  Harame, D L ^a   Stork, J M C ^a   Meyerson, B S ^a   Hsu, K Y J ^b   Cotte, J ^a   Jenkins, K A ^a   Cressler, J D ^d   Restle, P ^a   Crabbe E F ^a   Subbanna, S ^a   Tice, T E ^c   Scharf, B W ^c   Yasaitis, J A ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c ANALOG DEVICES INC   (United States)

^d AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DELAY CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; SI-GE ALLOYS; ANALOG STORAGE; DIGITAL CIRCUITS; DIGITAL TO ANALOG CONVERSION; DOPING (ADDITIVES); SEMICONDUCTOR MATERIALS;

ANALOG AND MIXED SIGNALS; EFFECTIVE STRAIN; GE PROFILE; HIGH-SPEED ANALOG; MIXED SIGNAL APPLICATIONS; OPTIMISATIONS; PERFORMANCE; SIGE HBTS; SIGE LAYERS; SIGE-HBT TECHNOLOGY;

ANALOG CIRCUITS; BIPOLAR TRANSISTORS;

BREAKDOWN VOLTAGE; EFFECTIVE STRAIN; GERMANIUM PROFILE; LEVERAGE;

EID: 0027877999     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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