Current Gain Rolloff in Graded-Base SiGe Heterojunction Bipolar Transistors

IEEE Electron Device Letters

Volumn 14, Issue 4, 1993, Pages 193-195

  Crabbé, Emmanuel F ^a   Cressler, John D ^a   Patton, Gary L ^a   Stork, Johannes M C ^a   Comfort, James H ^a   Sun, Jack Y C ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS;

BAND GAP GRADING; CURRENT GAIN;

BIPOLAR TRANSISTORS;

EID: 0027574261     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215153     Document Type: Article

References (11)

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