Impact of Profile Scaling on High-Injection Barrier Effects in Advanced UHV/CVD SiGe HBTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 253-256

  Joseph, Alvin J ^a   Cressler, John D ^a   Richey, David M ^a   Haramet, David L ^b  

^a AUBURN UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; SI-GE ALLOYS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; INTEGRATED CIRCUIT TESTING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

BARRIER EFFECTS; BASE DOPING PROFILE; GE PROFILE; HIGH INJECTION; INJECTION BARRIERS; PROFILE DESIGNS; PROFILE SHAPES; SCALINGS; SIGE HBTS; UHV/CVD;

HETEROJUNCTIONS; HETEROJUNCTION BIPOLAR TRANSISTORS;

HIGH INJECTION BARRIER EFFECTS; PROFILE DESIGN;

EID: 0030399677     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553578     Document Type: Conference Paper

References (6)

1. [l] S. Tiwari, IEEE EDL, vol. 10, p. 2105, 1989.
2. Z. Yu et al., BCTM Tech. Digest,p. 192, 1990.
3. J. Cressler et al., J. De Physique IV, vol. 4, p. 117, 1994.
4. D. Harame et al., IEEE TED, vol. 42, p. 455, 1995.
5. D. Harame et al., IEEE TED, vol. 42, p. 469, 1995.
6. D. Richey, to be presented at the 1996BCTM.