Enhanced optical absorption in microcrystalline silicon

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 903-906

  Beck, N ^a,b   Meier, J ^b   Fric, J ^a   Remes Z ^a   Poruba, A ^a   Fluckiger R ^b   Pohl, J ^c   Shah, A ^b   Vanecek M ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^c UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GLOW DISCHARGES; GRAIN BOUNDARIES; HYDROGEN; LIGHT ABSORPTION; LIGHT SCATTERING; MATHEMATICAL MODELS; PASSIVATION;

ENHANCED OPTICAL ABSORPTION; HIGH FREQUENCY GLOW DISCHARGE TECHNIQUE; INTERNAL STRAIN; MICROCRYSTALLINE BOUNDARIES; MICROCRYSTALLINE SILICON;

SEMICONDUCTING SILICON;

EID: 17144460366     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00080-4     Document Type: Article

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