Optimization of growth conditions for strained Si/Si1-yCy structures

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 15-20

  Joelsson, Kenneth B ^a   Ni, Wei Xin ^a   Pozina, Galia ^a   Hultman, Lars ^a   Hansson, Göran V ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Growth conditions; Molecular beam epitaxy; Si Si1 yCy

Indexed keywords

BAND STRUCTURE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBLIMATION; SURFACE ROUGHNESS;

HIGH TEMPERATURE CELLS;

HETEROJUNCTIONS;

EID: 0032065763     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00436-2     Document Type: Article

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