Precise evaluation of pattern distortion with variation of the impurity concentration and conductivity of silicon films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 SUPPL. B, 1997, Pages 2491-2495

  Ogino, Satoshi ^a   Fujiwara, Nobuo ^a   Maruyama, Takahiro ^a   Yoneda, Masahiro ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Annealing; Charge build up; Dry etching; ECR RIE; Ion implantation; Local side etch; Resistivity

Indexed keywords

VERTICAL ETCH RATES;

ANNEALING; BORON; ELECTRIC CHARGE; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC DISTORTION; ELECTRON CYCLOTRON RESONANCE; IMPURITIES; ION IMPLANTATION; PHOSPHORUS; PLASMA ETCHING; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING;

SEMICONDUCTING SILICON;

EID: 0031122080     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2491     Document Type: Review

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