Low resistance ohmic contact on p-type GaN grown by plasma-assisted molecular beam epitaxy

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 131-136

  Yoo, Myung C ^a   Lee, J W ^a   Myoung, J M ^a   Shim, K H ^a   Kim, K ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC RESISTANCE; METALLIZING; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDES; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; SCANNING AUGER MICROSCOPY; TRANSMISSION LINE MODEL PATTERNS;

OHMIC CONTACTS;

EID: 0030388303     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-131     Document Type: Conference Paper

References (13)