Improved resistance against the reductive ambient annealing of ferroelectric Pb(Zr, Ti)O3 thin film capacitors with lrO2 top electrode

IEICE Transactions on Electronics

Volumn E81-C, Issue 4, 1998, Pages 518-522

  Fujisaki, Yoshihisa ^a   Kushida Abdelghafar, Keiko ^a   Miki, Hiroshi ^a   Shimamoto, Yasuhiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

Catalysis; Hydrogen; Iro2, ferroelectric; PZT

Indexed keywords

ANNEALING; CATALYST ACTIVITY; ELECTRIC RESISTANCE; FERROELECTRIC DEVICES; FERROELECTRICITY; FILM PREPARATION; HYDROGEN; IRIDIUM COMPOUNDS; SEMICONDUCTING LEAD COMPOUNDS; THIN FILM DEVICES;

REDUCTIVE AMBIENT ANNEALING;

CAPACITORS;

EID: 0032049946     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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