7.03-μm2 Vcc/2-plate nonvolatile DRAM cell with a Pt/PZT/Pt/TiN capacitor patterned by one-mask dry etching

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 28-29

  Shoji, K ^a   Moniwa, M ^a   Yamashita, H ^a   Kisu, T ^a   Kaga, T ^a   Torii, K ^a   Kumihashi, T ^a   Morimoto, T ^a   Kawakami, H ^a   Gotoh, Y ^a   Itoga, T ^a   Tanaka, T ^a   Yokoyama, N ^a   Kure, T ^a   Ohkura, M ^a   et al , ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CELLULAR ARRAYS; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRIC PROPERTIES; ELECTRON DEVICE MANUFACTURE; FERROELECTRIC DEVICES; PASSIVATION; PLATINUM; RANDOM ACCESS STORAGE; TITANIUM NITRIDE;

AUTOMATIC NONVOLATILE WRITING; FERROELECTRIC MEMORY CELL; METALLIZATION; NONVOLATILE DYNAMIC RANDOM ACCESS MEMORY; ONE MASK DRY ETCHING; PLANARIZATION;

NONVOLATILE STORAGE;

EID: 0029714790     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)