Impact of post processing damages on the performance of high dielectric constant PLZT thin film capacitors for ULSI DRAM applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 337-340

  Khamankar, Rajesh ^a   Kim, Jiyoung ^a   Jiang, Bo ^a   Sudhama, C ^a   Maniar, Papu ^a   Moazzami, Reza ^a   Jones, Robert ^a   Lee, Jack ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CHEMICAL FINISHING; CMOS INTEGRATED CIRCUITS; LEAD COMPOUNDS; LEAKAGE CURRENTS; NONVOLATILE STORAGE; PERMITTIVITY; POLARIZATION; RANDOM ACCESS STORAGE; RELIABILITY; ULSI CIRCUITS;

DYNAMIC RANDOM ACCESS MEMORY STORAGE CAPACITORS; LANTHANUM DOPED LEAD ZIRCONATE TITANATE THIN FILMS; METALLIZATION ANNEALS; NON VOLATILE RANDOM ACCESS MEMORY; PASSIVATION ANNEALS;

THIN FILM DEVICES;

EID: 0028752010     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)