Half-micron ferroelectric memory cell technology with stacked capacitor structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 843-846

  Onishi, Shigeo ^a   Hamada, Kazuyuki ^a   Ishihara, Kazuya ^a   Ito, Yasuyuki ^a   Yokoyama, Seiichi ^a   Kudo, Jun ^a   Sakiyama, Keizo ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHEMICAL POLISHING; DATA STORAGE EQUIPMENT; DRY ETCHING; TITANIUM DIOXIDE;

HALF MICRON FERROELECTRIC MEMORY CELL; NONVOLATILE RANDOM ACCESS MEMORY (NVRAM); STACKED CAPACITOR STRUCTURE;

FERROELECTRIC DEVICES;

EID: 0028735625     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)