Low-Stress Sputtered Chromium-Nitride Hardmasks and Their Etching Characteristics for X-Ray Mask Fabrication

NEC Research and Development

Volumn 39, Issue 2, 1998, Pages 127-132

  Tsuboi, Shinji ^a,b,c,d,e   Seki, Miyoshi ^a,d,e,f   Kotsuji, Setsu ^a   Yoshihara, Takuya ^a   Fujii, Kiyoshi ^a   Suzuki, Katsumi ^a  

^a Silicon Syst Research Laboratories   (Japan)

^b KWANSEI GAKUIN UNIVERSITY   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d NEC CORPORATION   (Japan)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^f Shimodate Technical High School   (Japan)

Author keywords

Chromium Nitride (CrN); Etching; Hardmask; Mask; Stress; X ray lithography; X ray mask

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; MASKS; NITRIDES; PLASMA ETCHING; REACTIVE ION ETCHING; SPUTTERING; STRESS CONCENTRATION; TANTALUM ALLOYS;

CHROMIUM NITRIDE; HARDMASKS;

X RAY LITHOGRAPHY;

EID: 0032048574     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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