Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 6, 1995, Pages 3103-3108

  Dauksher, W J ^a   Resnick, D J ^a   Cummings, K D ^a   Baker, J ^a   Gregory, R B ^a   Theodore, N D ^a   Chan, J A ^a   Johnson, W A ^a   Mogab, C J ^a   Nicolet, M A ^a   Reid, J S ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; FABRICATION; MAGNETRON SPUTTERING; REACTIVE ION ETCHING; STRESSES; SURFACE ROUGHNESS; TANTALUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE STATE; DEFECTIVITY; IMAGE PLACEMENT; TANTALUM SILICIDE; TANTALUM SILICON NITRIDE; X RAY MASKS; ZERO STRESS STATE;

MASKS;

EID: 0029409821     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588331     Document Type: Article

References (11)