Nano-electron-beam lithography system and its application for 40-nm gate MOSFETs

NEC Research and Development

Volumn 37, Issue 2, 1996, Pages 160-168

  Ochiai, Yukinori ^a   Manako, Shoko ^a   Samukawa, Seiji ^b   Takeuchi, Kiyoshi ^b   Yamamoto, Toyoji ^b  

^a Fundamental Research Laboratories

^b Microlectron Research Laboratories

Author keywords

Dry etching; Electron Beam (EB) lithography; LSI; MOSFET; Nanolithography; Resist

Indexed keywords

NANOELECTRON BEAM LITHOGRAPHY;

ETCHING; GATES (TRANSISTOR); MOSFET DEVICES; NANOTECHNOLOGY; POLYMETHYL METHACRYLATES; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

ELECTRON BEAM LITHOGRAPHY;

EID: 0030121194     PISSN: 0547051X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. A. N. Broers, et al., "250-A Linewidths with PMMA Electron Resist," Appl. Phys. Lett., 33, pp. 392-394, 1987.
2. S. P. Beaumont, et al., "Sub-20-nm-Wide Metal Lines by Electron-Beam Exposure of Thin Poly (Methyl Methacrylate) Films and Lift Off," Appl. Phys. Lett., 38, pp. 436-439, 1981.
3. H. G. Craighead, et al., "10-mn Line Width Electron Beam Lithography on GaAs," Appl. Phys. Lett., 42, 1, pp. 38-40, 1983.
4. H. Nakazawa, et al., "A Thermally Assisted Field Emission Electron Beam Exposure System," J. Vac. Sci. & Technol., B6, 6, pp. 2019-2022, 1988.
5. Y. Taur, et al., "High Performance 0.1 mm CMOS Devices with 1.5 V Power Supply," Int. Electron Device Meet. 1993 Tech. Dig., pp. 127-130, 1993.
6. K. F. Lee, et al., "Room Temperature 0.1 mm CMOS Technology with 11.8 ps Gate Delay," Int. Electron Device Meet. 1993 Tech. Dig., pp. 131-134, 1993.
7. M. Ono, et al., "Sub-50 nm Gate Length N-MOSFETs with 10 nm Phosphorus Source and Drain Junctions," Int. Electron Device Meet. 1993 Tech. Dig., pp. 119-122, 1993.
8. 2 Dual Gate Process," 1995 Symp. VLSI Tech., pp. 9-10, 1995.
9. A. Claen, et al., "High Voltage Electron Beam Lithography of the Resolution Limits of SAL601 Negative Resist," Microelectron. Eng., 17, pp. 21-24, 1992.
10. Y. Ochiai, et al., "Ten-Nanometer Resolution Nanolithography Using Newly Developed 50-kV Electron Beam Direct Writing System," Jpn. J. Appl. Phys., 30, pp. 3266-3271, 1991.
11. S. Samukawa and K. Terada, "Pulse-Time Modulated Electron Cyclotron Resonance Plasma Etching for Selective, Highly Anisotropic, and Less-Charging Polycrystalline Silicon Patterning," J. Vac. Sci. Technol., B12, 6, pp. 3300-3305, 1994.
12. S. Manako, et al., "Nanolithography Using a Chemically Amplified Negative Resist by Electron Beam Exposure," Jpn. J. Appl. Phys., 33, pp. 6993-6997, 1994.
13. T. Azuma, et al., "Prebake Effects in Chemical Amplification Electron-Beam Resist," Jpn. J. Appl. Phys., 30, pp. 3138-3141, 1991.