X-ray mask distortion induced in back-etching preceding subtractive fabrication: Resist and absorber stress effect

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2845-2850

  Tsuboi, Shinji ^a,d   Yamashita, Yoshio ^b   Matsuo, Tadashi ^a   Ohta, Tsuneaki ^b   Shoki, Tsutomu ^c   Yoshihara, Takuya ^d   Taguchi, Takao ^c,e   Mitsui, Soichiro ^d,f   Noda, Shuichi ^b   Suzuki, Kazuo ^a   Hoga, Hiroshi ^b   Yamaguchi, Yoh Ichi ^c   Suzuki, Katsumi ^d  

^a TOPPAN PRINTING CO LTD   (Japan)

^b OKI ELECTRIC INDUSTRY CO   (Japan)

^c HOYA CORPORATION   (Japan)

^d NEC CORPORATION   (Japan)

^e FUJITSU LABORATORIES LTD   (Japan)

^f TOSHIBA CORPORATION   (Japan)

Author keywords

Absorber; Back etching; Preceding; Resist; SiC; SiN; Stress distribution (gradient); Subtractive; X ray lithography; X ray mask

Indexed keywords

COATING TECHNIQUES; COMPUTER SIMULATION; DISTORTION (WAVES); ETCHING; MASKS; PHOTORESISTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SILICON NITRIDE; STRESS CONCENTRATION;

ABSORBER STRESS EFFECT; BACK ETCHING; BACK ETCHING PRECEDING; CHEMICALLY AMPLIFIED RESIST SYSTEMS; LOW STRESS POSITIVE TONE RESISTS; PATTERN DISPLACEMENT; SUBTRACTIVE FABRICATION; X RAY MASK DISTORTION;

X RAY LITHOGRAPHY;

EID: 0030145799     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2845     Document Type: Article

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