Damage to n-mOSFETs from electrical stress relationship to processing damage and impact on device reliability

Microelectronics Reliability

Volumn 38, Issue 4, 1998, Pages 651-657

  Trabzon, L ^a   Awadelkarim, O O ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; ELECTRIC CURRENTS; GATES (TRANSISTOR); METALLIZING; PASSIVATION; PLASMAS; RELIABILITY; STRESS ANALYSIS;

DIRECT/ALTERNATING CURRENT ELECTRICAL STRESSES; PLASMA-CHARGING DAMAGE;

MOSFET DEVICES;

EID: 0032044905     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00194-7     Document Type: Article

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