Inductive damage and the impact of RF power and magnetic field during MERIE processes

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1996, Pages 131-132

  Salah, A ^a   Awadelkarim, O O ^a   Chan, Y D ^a   Werking, J ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CHLORINE; CMOS INTEGRATED CIRCUITS; DEFECTS; DEGRADATION; MAGNETIC FIELD EFFECTS; MOSFET DEVICES; NITROGEN; REACTIVE ION ETCHING; SILICON WAFERS; TRANSCONDUCTANCE;

BORON TRICHLORIDE; INDUCTIVE ANTENNAS; INDUCTIVE COUPLING; INDUCTIVE DAMAGE; MAGNETIC FIELD INTENSITY; MOS TRANSISTORS; SUBTHRESHOLD SWING;

PLASMA ETCHING;

EID: 0029701529     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)