Electrical-stress simulation of plasma-damage to submicron metal-oxide-silicon field-effect transistors: Comparison between direct current and alternating current stresses

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 692-696

  Trabzon, L ^a   Awadelkarim, O O ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5844261087     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580803     Document Type: Review

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