Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 569-571

  Trabzon, L ^a   Awadelkarim, O O ^a   Werking, J ^b   Bersuker, G ^b   Chan, Y D ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TUNNELING; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDES; PLASMA APPLICATIONS; SEMICONDUCTING SILICON;

CARRIER HOPPING; SINUSOIDAL AC STRESSING; THIN GATE OXIDES;

MOSFET DEVICES;

EID: 0030410025     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545773     Document Type: Article

References (20)

1. K. Tsunokoni, K. Nojiri, S. Kuboshima, and K. Hirobe, "The effects of charge build-up on gate oxide breakdown during by etching," in Ext. Abstr. 19th Conf. Solid State Devices and Materials, 1987, p. 195.
2. C. Gabriel, "Gate oxide damage from polysilicon etching" J. Vac. Sci. Technol. B, vol. 9, p. 370, 1991.
3. T. Gu, M. Okandan, O. O. Awadelkarim, S. J. Fonash, J. Rembetski, P. Aum, and Y. D. Chan, "Impact of poly-Si dry etching on 0.5 μm n-MOS trasistor performance: The presence of both plasma bombardment damage and plasma charging damage," IEEE Electron Lett., vol. 15, p. 48, 1994.
4. A. Salah, O. O. Awadelkarim, and Y. D. Chan, "Observation of a new type of plasma etching damage: Damage to n- channel transistors arising from inductive metal loops," Appl. Phys. Lett., vol. 68, p. 1690, 1996.
5. A. Salah, O. O. Awadelkarim, Y. D. Chan, and J. Werking, "Inductive damage and the impact of rf power and magnetic field during MERIE," in 1st Int. Symp. Plasma Process-Induced Damage, Santa Clara, CA, May 13-14, 1996, K. P. Cheung, M. Nakamura, and C. T. Gabriel, Eds., pp. 131-132.
6. S. Krishnan, S. Aur, G. Wilhite, and R. Rajgopal, "High density plasma etch induced damage to thin gate oxide," in IEDM Tech. Dig., 1995, p. 315.
7. M. Liang, S. Haddad, W. Cox, and S. Cagnina, "Degradation of very thin gate oxide MOS devices under dynamic high field current stress," in IEDM Tech. Dig., 1986, p. 394.
8. 2," IEEE Electron Device Lett., vol. 12, p. 267, 1991.
9. E. Rosenbaum, Z. Liu, and C. Hu, "The effect of oxide stress waveform on MOSFET performance," in IEDM Tech. Dig., 1991, p. 719.
10. O. O. Awadelkarim, S. J. Fonash, P. I. Mikulan, and Y. D. Chan, "Plasma-charging transistors: latent defects and passivation/depassivation of defects by hydrogen," J. Appl. Phys., vol. 79, p. 517, 1996.
11. R. Bellens, P. Heremans, G. Groeseneken, H. E. Maes, and W. Weber, "The influence of MOSFET's," IEEE Trans. Electron Devices. vol. 37, p. 310, 1990.
12. E. Rosenbaum, Z. Liu, and C. Hu, "Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions," IEEE Trans. Electron Devices, vol. 40, p. 2287, 1993.
13. 2 films under dynamic stress," in IEEE-IRPS, 1996, pp. 61-66.
14. D. J. Dumin and S. Vanchanathan, "Bipolar stressing, breakdown, and trap generation in thin silicon oxides," IEEE Trans. Electron Devices, vol. 41, p. 936, 1994.
15. 2O-annealed MOSFET characteristics in response to dynamic oxide stressing," IEEE Electron Device Lett., vol. 14, p. 225, 1993.
16. J. C. Dyre, "Some remarks on ac conduction in disordered solids," J. Non-Cryst. Solids, vol. 135, p. 219, 1991.
17. A. K. Jonscher, "IIAC conductivity and high field effects," in Electronic and Structural Properties of Amorphous Semiconductors: Proceedings of the 13th Session of the Seottish Universities Summer School in Physics, 1972, P. G. Le Comber and J. Mort, Eds. New York: Academic, 1973, pp. 329-361.
18. M. Pollak and T. H. Geballe, "Low-frequency conductivity due to hopping processes in silicon," Phys. Rev., vol. 122, p. 1745, 1961.
19. M. H. Nathoo and A. K. Jonscher, "High field and ac properties of stearic acid films," J. Phys. C: Solid State Phys., vol. 4, p. 301, 1971.
20. 2 films," Int. J. Electron., vol. 44, p. 657, 1978.