Observation of a new type of plasma etching damage: Damage to N-channel transistors arising from inductive metal loops

Applied Physics Letters

Volumn 68, Issue 12, 1996, Pages 1690-1692

  Salah, A ^a   Awadelkarim, O O ^a   Preuninger, F ^b   Chan, Y D ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004210719     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115907     Document Type: Article

References (8)

1. K. Tsunokoni, K. Nojiri, S. Kuboshima, and K. Hirobe, in Extended Abstracts of the 19th Conference on Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, Japan, 1987), p. 195.
2. I.-W Wu, R. H. Bruce, G. B. Anderson, M. Koyanagi, and T. Y. Huang, SPIE 1185, 284 (1989).
3. H. Shin, C. C. King, T. Horiuchi, and C. Hu, IEEE Electron Device Lett. 12, 404 (1991).
4. C. Gabriel, J. Vac. Sci. Technol. B 9, 370 (1991).
5. T. Gu, M. Okandan, O. O. Awadelkarim, S. J. Fonash, J. Rembetski, P. Aum, and Y. D. Chan, IEEE Electron Device Lett. 15, 48 (1994).
6. J. P. McVittie and C. T. Gabriel, Solid State Technol. 35, 81 (1992).
7. P. K. Gadgil, J. Vac. Sci. Technol. 12, 102 (1994).
8. D. K. Cheng, Field and Wave Electromagnetics (Addison-Wesley, Reading, MA, 1989).