Spectroellipsometric characterization of SIMOX with nanometre-thick top Si layers

Thin Solid Films

Volumn 313-314, Issue , 1998, Pages 264-269

  Yamaguchi, Tomuo ^a   Nasu, Masahiro ^a   Jiang, Zhong Tao ^a   Tabe, Michiharu ^a   Kanda, Yozo ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOYO UNIVERSITY   (Japan)

Author keywords

Dielectric constants; Si; SIMOX; Size dependence; Spectroscopic ellipsometry

Indexed keywords

CRYSTAL MICROSTRUCTURE; ELLIPSOMETRY; INTERFACES (MATERIALS); PERMITTIVITY; SILICA;

SEPARATION BY IMPLANTED OXYGEN (SIMOX); SPECTROELLIPSOMETRY;

SEMICONDUCTING SILICON;

EID: 0032003726     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00830-4     Document Type: Article

References (15)

1. M. Tabe, T. Yamamoto, Appl. Phys. Lett. 69 (1996) 2222.
2. K. Kajiyama, Y. Morikawa, I. Hamaguchi, T. Yano, Jpn. J. Appl. Phys. 35 (1996) 526.
3. I. Hamaguchi, T. Fujita, T. Yano, S. Hayashi, K. Kajiyama, Jpn. J. Appl. Phys. 34 (1995) 2989.
4. M. Takahashi, Y. Sakakibara, J. Nakata, Jpn. J. Appl. Phys. 35 (1996) 5237.
5. T. Yamaguchi, S. Tonooka, A.H. Jayatissa, M. Aoyama, M. Tabe, Y. Kanda, Proc. SPIE 2873 (1996) 278.
6. S. Adachi, Phys. Rev. B 38 (1988) 12966.
7. T. Suzuki, S. Adachi, Jpn. J. Appl. Phys. 32 (1993) 4900.
8. E.D. Palik, (Ed.), Handbook of Optical Constants of Solids, Academic Press, New York, 1985, 547 p.
9. T. Yamaguchi, M. Ogawa, H. Takahashi, N. Saito, E. Anno, Surface Sci. 129 (1983) 232.
10. A. Kawabata, R. Kubo, J. Phys. Soc. Japan 21 (1966) 1765.
11. H.V. Nguyen, Y.L. Lu, S. Kim, M. Wakagi, R.W. Collins, Phys. Rev. Lett. 74 (1995) 3880.
12. A.H. Jayatissa, T. Yamaguchi, Y. Hatanaka, Y. Nakanishi, K. Sano, Phys. Stat. Sol. (a) 158 (1996) 265.
13. A.H. Jayatissa, T. Yamaguchi, S. Furuta, H. Kan, Surface Sci. 380 (1997) 145.
14. T. Yamaguchi, A.H. Jayatissa, M. Aoyama, M. Tabe, Appl. Surface Sci. 113/114 (1997) 493.
15. A.H. Jayatissa, T. Yamaguchi, M. Nasu, M. Aoyama, Jpn. J. Appl. Phys. 36 (1997) 2581.