Spectroscopic ellipsometry of SIMOX (separation by implanted oxygen): Thickness distribution of buried oxide and optical properties of top-Si layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2581-2586

  Jayatissa, Ahalapitiya Hewage ^a,b   Yamaguchi, Tomuo ^a   Nasu, Masahiro ^a   Aoyama, Mitsuru ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

Buried oxide; Ellipsometry; Multilayer analysis; Optical properties; SIMOX; Thickness distribution

Indexed keywords

BURIED OXIDES; SEPARATION BY IMPLANTED OXYGEN (SIMOX); THICKNESS DISTRIBUTION;

ELLIPSOMETRY; ETCHING; OPTICAL PROPERTIES; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SPECTROSCOPIC ANALYSIS;

THIN FILMS;

EID: 0031139339     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2581     Document Type: Article

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