SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 380, Issue 1, 1997, Pages 145-150

Influence of thickness distribution on spectroscopic ellipsometry of SOS

(4) Jayatissa, Ahalapitiya Hewage a,c Yamaguchi, Tomuo a Furuta, Shin Ichi b Kan, Hirofumi b

a SHIZUOKA UNIVERSITY (Japan)

b CENTRAL RESEARCH LABORATORY (Japan)

c NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES (Japan)

Author keywords

Ellipsometry; Semiconductor insulator interfaces

Indexed keywords

ALUMINA; DIELECTRIC FILMS; ELLIPSOMETRY; INTERFACES (MATERIALS); MULTILAYERS; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SPECTROSCOPIC ANALYSIS; SURFACE STRUCTURE; THIN FILMS;

SILICON ON SAPPHIRE (SOS);

SEMICONDUCTING SILICON;

EID: 0031141183 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00016-2 Document Type: Article

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.