Optical thickness evaluation of separation by IMplanted OXygen (SIMOX) wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 PART A, 1996, Pages 526-532

  Kajiyama, Kenji ^a   Morikawa, Yoji ^a   Hamaguchi, Iaso ^a   Yano, Takayuki ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

Ellipsometry; Layer thickness; Oxygen; Reflection; Si; SIMOX

Indexed keywords

ELLIPSOMETRY; MEASUREMENT ERRORS; OPTICAL VARIABLES MEASUREMENT; OXYGEN; REFLECTION; SEMICONDUCTING SILICON; SEPARATION; SURFACE MEASUREMENT; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL THICKNESS EVALUATION; REFLECTIVE OPTICAL MEASURING METHODS; SEPARATION BY IMPLANTED OXYGEN; SINGLE WAVELENGTH ELLIPSOMETRY; THERMAL OXIDE LAYER;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030082260     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.526     Document Type: Review

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