Source/drain ion implantation into ultra-thin-single-crystalline-silicon-layer of Separation by IMplanted OXygen (SIMOX) wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 10, 1996, Pages 5237-5241

  Takahashi, Mitsutoshi ^a   Sakakibara, Yutaka ^a   Nakata, Jyoji ^b  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

Amorphous; Implantation; Pile up; Recrystallization; SIMOX; TRIM

Indexed keywords

HALL MOBILITY; IMPLANTED OXYGEN WAFERS; IMPLANTER; OXIDE FILM; RAPID THERMAL ANNEALING; SHEET RESISTANCE;

AMORPHOUS MATERIALS; ANNEALING; CARRIER CONCENTRATION; INTERFACES (MATERIALS); ION IMPLANTATION; OXYGEN; RECRYSTALLIZATION (METALLURGY); RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON ON INSULATOR TECHNOLOGY; SINGLE CRYSTALS; SOLUBILITY; ULTRATHIN FILMS;

SILICON WAFERS;

EID: 0030263171     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5237     Document Type: Article

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