High power operation of 4H-SiC MESFETs at 10 GHz

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 138-139

  Sriram, S ^a   Smith, T J ^a   Rowland, L B ^a   Burk Jr , A A ^a   Augustine, G ^a   Balakrishna, V ^a   Hobgood, H M ^a   Brandt, C D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC IMPEDANCE; GAIN MEASUREMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS;

WIDE BANDGAP SEMICONDUCTOR DEVICES;

MESFET DEVICES;

EID: 0030713247     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)