Low threshold 3 μm interband cascade "W" laser

Journal of Electronic Materials

Volumn 27, Issue 2, 1998, Pages 77-80

  Felix, C L ^a   Bewley, W W ^a   Aifer, E H ^a   Vurgaftman, I ^a   Meyer, J R ^a   Lin, C H ^b   Zhang, D ^b   Murry, S J ^b   Yang, R Q ^b   Pei, S S ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

Author keywords

InAs GaInSb; Interband cascade laser; Mid infrared; Slope efficiency; Threshold; Type II semiconductor

Indexed keywords

CURRENT DENSITY; ELECTRONS; PHOTONS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

INTERBAND CASCADE LASERS (ICL);

SEMICONDUCTOR LASERS;

EID: 0031996536     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0192-2     Document Type: Article

References (16)

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16. J. Faist, private communication. The highest published value for the QCL is 320 mW/A (J. Faist, F. Capasso, C. Sirtori, D.L. Sivco, A.L. Hutchinson and A.Y. Cho, Appl. Phys. Lett. 65, 538 (1995)).