A capacitor-over-bit-line (COB) cell with a hemispherical-grain storage node for 64 Mb DRAMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 655-658

  Sakao, M ^a   Kasai, N ^a   Ishijima, T ^a   Ikawa, E ^a   Watanabe, H ^a   Terada, K ^a   Kikkawa, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; SEMICONDUCTING SILICON;

CAPACITOR-OVER-BIT-LINE (COB) CELLS; DIELECTRIC FILMS; DRAM; POLYSILICON;

DATA STORAGE, DIGITAL;

EID: 0025576836     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)