Electron tunneling through chemical oxide of silicon

Japanese Journal of Applied Physics

Volumn 34, Issue 5, 1995, Pages L609-L611

  Saito, Kenji ^a   Matsuda, Masanori ^a   Yasutake, Masatoshi ^a,b   Hattori, Takeo ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

^b SEIKO INSTRUMENTS INC   (Japan)

Author keywords

Atomic force microscope; Chemical oxide; Electron tunneling; MOS diode; Silicon oxide

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; ELECTRON TUNNELING; GOLD; MICROSCOPES; OXIDES; PROBES;

ATOMIC FORCE MICROSCOPES; CARRIER TRANSPORT; CHEMICAL OXIDES;

SEMICONDUCTING SILICON;

EID: 0029308394     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.L609     Document Type: Article

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