Charge Transport in Ultrathin Silicon Nitrides

Journal of the Electrochemical Society

Volumn 142, Issue 3, 1995, Pages 990-996

  Kobayashi, Kiyoteru ^a   Teramoto, Akinobu ^a   Hirayama, Makoto ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONS; SILICON NITRIDE; TEMPERATURE MEASUREMENT; THICKNESS MEASUREMENT; TRANSISTORS;

CONDUCTION CURRENT; ELECTRON CURRENT; HOLE CURRENT; TEMPERATURE DEPENDENCE MEASUREMENT; TEMPERATURE RANGE; TUNNEL EMISSION COMPONENT;

CHARGE TRANSFER;

EID: 0029273547     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2048573     Document Type: Article

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