Reliability of thin SiO2 at direct-tunneling voltages

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 609-612

  Schuegraf, Klaus F ^a   Park, Donggun ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA; VOLTAGE MEASUREMENT;

ANODE HOLE INJECTION MODEL; DIRECT TUNNELING; FOLLOW-NORDHEIM THEORY; GATE INSULATORS;

VLSI CIRCUITS;

EID: 0028756975     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)