MOVPE growth of high electron mobility AlGaN/GaN heterostructures

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 201-206

  Redwing, J M ^a   Flynn, J S ^a   Tischler, M A ^a   Mitchel, W ^a   Saxler, A ^a  

^a Advanced Technology Materials Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRONS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; IONIZATION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM NITRIDE; ELECTRON DONOR LAYER; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY; TWO DIMENSIONAL ELECTRON GAS;

SEMICONDUCTOR GROWTH;

EID: 0029726092     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)