Room-Temperature Operation of a Resonant-Tunneling Hot-Electron Transistor Based Integrated Circuit

IEEE Electron Device Letters

Volumn 14, Issue 9, 1993, Pages 441-443

  Moise, Theodore S ^a   Seabaugh, Alan C ^a   Beam, Edward A ^a   Randall, John N ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ELECTRON RESONANCE; ELECTRON TUNNELING; EPITAXIAL GROWTH; HOT CARRIERS; INTEGRATED CIRCUITS; LOGIC CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILM DEVICES;

HOT ELECTRON TRANSISTOR BASED INTEGRATED CIRCUIT; INDIUM GALLIUM PHOSPHIDE; ROOM TEMPERATURE OPERATION;

TRANSISTORS;

EID: 0027656296     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.244713     Document Type: Article

References (14)

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