-
1
-
-
0342746278
-
From physics to function
-
Sept.
-
J. A. Morton, “From physics to function,” IEEE Spectrum, p. 62, Sept. 1965.
-
(1965)
IEEE Spectrum
, pp. 62
-
-
Morton, J.A.1
-
2
-
-
36149018587
-
New phenomenon in narrow germanium p-n junctions
-
L. Esaki, “New phenomenon in narrow germanium p-n junctions,” Phys. Rev., vol. 109, p. 603, 1958.
-
(1958)
Phys. Rev
, vol.109
, pp. 603
-
-
Esaki, L.1
-
3
-
-
0014764318
-
Charged-coupled semiconductor devices
-
W. S. Boyle, and G. E. Smith, “Charged-coupled semiconductor devices,” Bell Syst. Tech. J., vol. 49, p. 587, 1970.
-
(1970)
Bell Syst. Tech. J
, vol.49
, pp. 587
-
-
Boyle, W.S.1
Smith, G.E.2
-
4
-
-
0003763268
-
Graded-gap and superlattice devices by bandgap engineering
-
R. K. Wil-lardson lardson and A. C. Beers, Eds.New York: Academic
-
F. Capasso, “Graded-gap and superlattice devices by bandgap engineering,” in Semiconductors and Semimetals, vol. 24, R. K. Wil-lardson lardson and A. C. Beers, Eds. New York: Academic, 1987, p. 319.
-
(1987)
Semiconductors and Semimetals
, vol.24
, pp. 319
-
-
Capasso, F.1
-
5
-
-
0021461656
-
Novel hybrid optically bistable switch: The quantum well self-electrooptic effect device
-
D. A. B. Miller et al., “Novel hybrid optically bistable switch: The quantum well self-electrooptic effect device,” Appl. Phys. Lett., vo l. 45, p. 13, 1984.
-
(1984)
Appl. Phys. Lett
, vol.45
, pp. 13
-
-
Miller, D.A.B.1
-
6
-
-
0016072199
-
Resonant tunneling in semiconductor double barriers
-
L. L. Chang, L. Esaki, and R. Tsu, “Resonant tunneling in semiconductor double barriers,” Appl. Phys. Lett., vol. 24, 593, 1974.
-
(1974)
Appl. Phys. Lett
, vol.24
, Issue.593
-
-
Chang, L.L.1
Esaki, L.2
Tsu, R.3
-
7
-
-
0002003504
-
Resonant tunneling through quantum wells at frequencies up to 2.5 THz
-
T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, and D. D. Peck, “Resonant tunneling through quantum wells at frequencies up to 2.5 THz,” Appl. Phys. Lett., vol. 43, p. 588, 1983.
-
(1983)
Appl. Phys. Lett
, vol.43
, pp. 588
-
-
Sollner, T.C.L.G.1
Goodhue, W.D.2
Tannenwald, P.E.3
Parker, C.D.4
Peck, D.D.5
-
8
-
-
84939375204
-
Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
-
E. R. Brown, T. C. L. G. Sollner, C. D. Parker, W. D. Goodhue, and C. L. Chen, “Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes,” submitted to Appl. Phys. Lett.
-
submitted to Appl. Phys. Lett
-
-
Brown, E.R.1
Sollner, T.C.L.G.2
Parker, C.D.3
Goodhue, W.D.4
Chen, C.L.5
-
9
-
-
0001306295
-
Pseudomorphic In0.53Ga047As/AlAs/InAs resonant tunneling diodes with peak-to-valley valley current ratios of 30 at room temperature
-
T. P. E. Broekaert, W. Lee, and C. G. Fonstad, “Pseudomorphic In0.53Ga047As/AlAs/InAs resonant tunneling diodes with peak-to-valley valley current ratios of 30 at room temperature,” Appl. Phys. Lett., vol. 53, p. 1545, 1988.
-
(1988)
Appl. Phys. Lett
, vol.53
, pp. 1545
-
-
Broekaert, T.P.E.1
Lee, W.2
Fonstad, C.G.3
-
10
-
-
18444403545
-
High speed resonant tunneling diodes
-
E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, and C. L. Chen, “High speed resonant tunneling diodes,” Proc. SPIE, vol. 943, p. 2, 1989.
-
(1989)
Proc. SPIE
, vol.943
, pp. 2
-
-
Brown, E.R.1
Sollner, T.C.L.G.2
Goodhue, W.D.3
Chen, C.L.4
-
11
-
-
84939348908
-
Resonant tunneling devices and their applications
-
R. K. Watts, Ed. New York: Wileychap.5
-
F. Capasso, S. Sen, F. Beltram, and A. Y. Cho, “Resonant tunneling devices and their applications,” in Submicron Integrated Circuits, R. K. Watts, Ed. New York: Wiley, 1989, chap. 5.
-
(1989)
Submicron Integrated Circuits
-
-
Capasso, F.1
Sen, S.2
Beltram, F.3
Cho, A.Y.4
-
12
-
-
0141624615
-
Double barrier in thin film triodes
-
R. H. Davis and H. H. Hosack, “Double barrier in thin film triodes”, I. vol. 1963.
-
(1963)
J. Appl. Physc
, vol.34
, pp. 864
-
-
Davis, R.H.1
Hosack, H.H.2
-
13
-
-
0002270611
-
The possibility of resonance transmission of electrons in crystals through a system of barriers
-
(English trans.Soy. Phys. JETP, vol. 18 p. 46 1964)
-
L. V. Iogansen, “The possibility of resonance transmission of electrons in crystals through a system of barriers,” Zh. Eksp. Teor. Fiz., vol. 45, p. 207, 1963. (English trans., Soy. Phys. JETP, vol. 18, p. 46, 1964).
-
(1963)
Zh. Eksp. Teor. Fiz
, vol.45
, pp. 207
-
-
Iogansen, L.V.1
-
14
-
-
21544482969
-
Resonant tunneling transistor withquantum well base and high-energy injection: A new negative differential resistance device
-
F. Capasso and R. A. Kiehl, “Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device,” J. Appl. Phys., vol. 58, p. 1366, 1985.
-
(1985)
J. Appl. Phys
, vol.58
, pp. 1366
-
-
Capasso, F.1
Kiehl, R.A.2
-
15
-
-
0021504361
-
Tunable resonant tunneling semiconductor emitter structure
-
B. RiccO and P. M. Solomon, “Tunable resonant tunneling semiconductor emitter structure,” IBM Tech. Dig. Bull., vol. 27, p. 3053, 1984.
-
(1984)
IBM Tech. Dig. Bull
, vol.27
, pp. 3053
-
-
RiccO, B.1
Solomon, P.M.2
-
16
-
-
84953822170
-
-
R. T. Bate, G. A. Frazier, W. R. Frensley, J. K. Lee, and M. A. Reed, Proc. SPIE, vol. 792, p. 26, 1987.
-
(1987)
Proc. SPIE
, vol.792
, pp. 26
-
-
Bate, R.T.1
Frazier, G.A.2
Frensley, W.R.3
Lee, J.K.4
Reed, M.A.5
-
17
-
-
0022152737
-
A new functional resonant tunneling hot electron transistor (RHET)
-
N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu, and H. Nishi, “A new functional resonant tunneling hot electron transistor (RHET),” Japan J. Appl. Phys., vol. 24, p. L-853, 1985.
-
(1985)
Japan J. Appl. Phys
, vol.24
, pp. L-853
-
-
Yokoyama, N.1
Imamura, K.2
Muto, S.3
Hiyamizu, S.4
Nishi, H.5
-
18
-
-
2342663844
-
Resonant-tunneling transistors using InGaAs-based based materials
-
N. Yokoyama, et al., “Resonant-tunneling transistors using InGaAs-based based materials,” Proc. SPIE, vol. 943, p. 14, 1988.
-
(1988)
Proc. SPIE
, vol.943
, pp. 14
-
-
Yokoyama, N.1
-
19
-
-
0022791620
-
Quantum well resonant tunneling bipolar transistor operating at room temperature
-
F. Capasso, S. Sen, A. C. Gossard, A. L. Hutchinson, and J. H. English, “Quantum well resonant tunneling bipolar transistor operating at room temperature,” IEEE Electron Device Lett., vol. EDL-7, 7, p. 573, 1986.
-
(1986)
IEEE Electron Device Lett
, vol.EDL-7
, Issue.7
, pp. 573
-
-
Capasso, F.1
Sen, S.2
Gossard, A.C.3
Hutchinson, A.L.4
English, J.H.5
-
20
-
-
0023014959
-
A resonant tunneling bipolar transistor (RBT): A proposal and demonstration for new functional device with high current gains
-
T. Futatsugi et al., “A resonant tunneling bipolar transistor (RBT): A proposal and demonstration for new functional device with high current gains,” in IEDM, Tech. Dig., 1986, p. 286.
-
(1986)
IEDM, Tech. Dig
, pp. 286
-
-
Futatsugi, T.1
-
21
-
-
0022924696
-
Excellent negative differential resistance of In-AlAs/InGaAs AlAs/InGaAs resonant tunneling barrier structure grown by MBE
-
T. Inata et al., “Excellent negative differential resistance of In-AlAs/InGaAs AlAs/InGaAs resonant tunneling barrier structure grown by MBE,” Japan. J. Appl. Phys., vol. 25, p. 983, 1986.
-
(1986)
Japan. J. Appl. Phys
, vol.25
, pp. 983
-
-
Inata, T.1
-
22
-
-
0001347698
-
Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling
-
F. Capasso, S. Sen, A. Y. Cho, and D. L. Sivco, “Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunneling,” Appl. Phys. Lett., vo l. 53, p. 1056, 1988.
-
(1988)
Appl. Phys. Lett
, vol.53
, pp. 1056
-
-
Capasso, F.1
Sen, S.2
Cho, A.Y.3
Sivco, D.L.4
-
23
-
-
0024088640
-
Multiple state resonant tunneling bipolar transistor operating at room temperature and its application as a frequency multiplier
-
S. Sen, F. Capasso, A. Y. Cho, and D. L. Sivco, “Multiple state resonant tunneling bipolar transistor operating at room temperature and its application as a frequency multiplier,” IEEE Electron Device Lett., vol. 9, p. 533, 1988.
-
(1988)
IEEE Electron Device Lett
, vol.9
, pp. 533
-
-
Sen, S.1
Capasso, F.2
Cho, A.Y.3
Sivco, D.L.4
-
25
-
-
36549101692
-
Observation of resonant tunneling through a compositionally graded parabolic quantum well
-
S. Sen et al., “Observation of resonant tunneling through a compositionally graded parabolic quantum well,” Appl. Phys. Lett., vo l. 51, p. 1428, 1987.
-
(1987)
Appl. Phys. Lett
, vol.51
, pp. 1428
-
-
Sen, S.1
-
26
-
-
33750030048
-
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
-
F. Capasso, K. Mohammed, and A. Y. Cho, “Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications,” IEEE J. Quantum Electron., vol. QE-22, p. 1853, 1986.
-
(1986)
IEEE J. Quantum Electron
, vol.QE-22
, Issue.1853
-
-
Capasso, F.1
Mohammed, K.2
Cho, A.Y.3
-
27
-
-
0024069672
-
Scaling ballistic heterojunction bipolar transistors
-
A. F. J. Levi, “Scaling ballistic heterojunction bipolar transistors,” Electron. Lett., vol. 24, p. 1273, 1988.
-
(1988)
Electron. Lett
, vol.24
, pp. 1273
-
-
Levi, A.F.J.1
-
28
-
-
0001426918
-
Equivalence between resonant tunneling and sequential tunneling in double-barrier diodes
-
T. Weil and B. Vinter, “Equivalence between resonant tunneling and sequential tunneling in double-barrier diodes,” Appl. Phys. Lett., vol. 50, p. 1281, 1987.
-
(1987)
Appl. Phys. Lett
, vol.50
, pp. 1281
-
-
Weil, T.1
Vinter, B.2
-
29
-
-
36549096927
-
Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
-
R. J. Malik, R. Nottenburg, E. F. Schubert, J. F. Walker, and R. W. Ryan, “Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament,” Appl. Phys. Len., vol. 53, p. 2661, 1988.
-
(1988)
Appl. Phys. Len
, vol.53
, pp. 2661
-
-
Malik, R.J.1
Nottenburg, R.2
Schubert, E.F.3
Walker, J.F.4
Ryan, R.W.5
-
30
-
-
0001114823
-
Nonrandom doping and elastic scattering of carriers in semiconductors
-
A. F. J. Levi, S. L. McCall, and P. M. Platzman, “Nonrandom doping and elastic scattering of carriers in semiconductors,” Appl. Phys. Lett., vo l. 54, p. 940, 1989.
-
(1989)
Appl. Phys. Lett
, vol.54
, pp. 940
-
-
Levi, A.F.J.1
McCall, S.L.2
Platzman, P.M.3
-
31
-
-
0002848531
-
Non equilibrium electron transport in bipolar devices
-
A. F. J. Levi and Y. Yafet, “Non equilibrium electron transport in bipolar devices,” vol. 51, p. 42, 1987.
-
(1987)
, vol.51
, pp. 42
-
-
Levi, A.F.J.1
Yafet, Y.2
-
32
-
-
0345317202
-
Elastic scattering centers in resonant tunneling diodes
-
E. Wolak et al., “Elastic scattering centers in resonant tunneling diodes,” Appl. Phys. Lett., vol. 53, p. 201, 1988.
-
(1988)
Appl. Phys. Lett
, vol.53
, pp. 201
-
-
Wolak, E.1
-
33
-
-
12244258196
-
Resonant tunneling spectroscopy of hot minority electrons injected in gallium arsenide quantum wells
-
F. Capasso, S. Sen, A. Y. Cho, and A. L. Hutchinson, “Resonant tunneling spectroscopy of hot minority electrons injected in gallium arsenide quantum wells,” Appl. Phys. Lett., vol. 50, p. 930, 1987.
-
(1987)
Appl. Phys. Lett
, vol.50
, pp. 930
-
-
Capasso, F.1
Sen, S.2
Cho, A.Y.3
Hutchinson, A.L.4
-
34
-
-
0001020938
-
Realization of a three terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor
-
M. A. Reed, W. F. Frensley, R. J. Matyi, J. N. Randall, and A. C. Seabaugh, “Realization of a three terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor,” Appl. Phys. Lett., vol. 54, p. 1034, 1989.
-
(1989)
Appl. Phys. Lett
, vol.54
, pp. 1034
-
-
Reed, M.A.1
Frensley, W.F.2
Matyi, R.J.3
Randall, J.N.4
Seabaugh, A.C.5
-
35
-
-
0023436796
-
Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity
-
S. Sen, F. Capasso, A. Y. Cho, and D. Sivco, “Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity,” IEEE Trans. Electron. Devices, vol. ED-34, p. 2187, 1987.
-
(1987)
IEEE Trans. Electron. Devices
, vol.ED-34
, pp. 2187
-
-
Sen, S.1
Capasso, F.2
Cho, A.Y.3
Sivco, D.4
-
36
-
-
0024016656
-
A multiple-state memory cell based on the resonant tunneling diode
-
J. Soderstrom and T. G. Andersson, “A multiple-state memory cell based on the resonant tunneling diode,” IEEE Electron Device Lett., vol. 9, p. 200, 1988.
-
(1988)
IEEE Electron Device Lett
, vol.9
, pp. 200
-
-
Soderstrom, J.1
Andersson, T.G.2
-
37
-
-
1542422845
-
Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic
-
R. C. Potter, A. A. Lakhani, D. Beyea, E. Hempling, and A. Fathimulla, mulla, “Three-dimensional integration of resonant tunneling structures for signal processing and three-state logic,” Appl. Phys. Lett., vol. 52, p. 2163, 1988.
-
(1988)
Appl. Phys. Lett
, vol.52
, pp. 2163
-
-
Potter, R.C.1
Lakhani, A.A.2
Beyea, D.3
Hempling, E.4
Fathimulla, A.5
-
38
-
-
0024057589
-
New resonant tunneling devices with multiple negative resistance regions and high room temperature peak to valley ratio
-
S. Sen, F. Capasso, D. Sivco, and A. Y. Cho, “New resonant tunneling devices with multiple negative resistance regions and high room temperature peak to valley ratio,” IEEE Electron Device Lett., vol. 9, p. 402, 1988.
-
(1988)
IEEE Electron Device Lett
, vol.9
, pp. 402
-
-
Sen, S.1
Capasso, F.2
Sivco, D.3
Cho, A.Y.4
-
40
-
-
0022080461
-
Room temperature observation of differential negative resistance in an Al As/GaAs/Al As resonant tunneling diode
-
M. Tsuchiya, H. Sakaki, and J. Yoshino, “Room temperature observation of differential negative resistance in an Al As/GaAs/Al As resonant tunneling diode,” Japan. J. Appl. Phys., vol. 24, p. L466, 1985.
-
(1985)
Japan. J. Appl. Phys
, vol.24
, pp. 1466
-
-
Tsuchiya, M.1
Sakaki, H.2
Yoshino, J.3
-
41
-
-
84915300890
-
Microwave multiple-state resonant tunneling bipolar transistor
-
L. M. Lunardi et al., “Microwave multiple-state resonant tunneling bipolar transistor„,- IEEE Electron Device Lett. vol. 10, p. 219, 1989.
-
(1989)
IEEE Electron Device Lett
, vol.10
, pp. 219
-
-
Lunardi, L.M.1
-
42
-
-
84914038658
-
Microwave analysis of resonant tunneling hot electron transistor at room temperature
-
(Tokyo)
-
T. Mori, “Microwave analysis of resonant tunneling hot electron transistor at room temperature... in Extended Abstracts 20th Conf. Solid State Devices and Materials (Tokyo), 1988, p. 507.
-
(1988)
Extended Abstracts 20th Conf. Solid State Devices and Materials
, pp. 507
-
-
Mori, T.1
-
43
-
-
0024108373
-
Parity generator circuit using a multi-state resonant tunneling bipolar transistor
-
S. Sen, F. Capasso, A. Y. Cho, and D. L. Sivco, “Parity generator circuit using a multi-state resonant tunneling bipolar transistor,” Electron. Lett., vol. 24, p. 1506, 1988.
-
(1988)
Electron. Lett
, vol.24
, pp. 1506
-
-
Sen, S.1
Capasso, F.2
Cho, A.Y.3
Sivco, D.L.4
-
44
-
-
0024010085
-
Eleven-bit parity generator with a single, vertically integrated resonant tunneling device
-
A. A. Lakhani, R. C. Potter, and H. S. Hier, “Eleven-bit parity generator with a single, vertically integrated resonant tunneling device,” Electron. Lett., vol. 24, p. 681, 1988.
-
(1988)
Electron. Lett
, vol.24
, pp. 681
-
-
Lakhani, A.A.1
Potter, R.C.2
Hier, H.S.3
-
45
-
-
0024056609
-
A triple well resonant tunneling diode for multiple valued logic applications
-
T. Tanoue, H. Mizuta, and S. Takahashi, “A triple well resonant tunneling diode for multiple valued logic applications,” IEEE Electron Dev. Lett., vol. 9, p. 365, 1988.
-
(1988)
IEEE Electron Dev. Lett
, vol.9
, pp. 365
-
-
Tanoue, T.1
Mizuta, H.2
Takahashi, S.3
-
46
-
-
51149221373
-
Resonant tunneling of two dimensional electrons through a quantum wire: A negative transconductance device
-
also. Erratum. Appl. Phys. Lett. 48 1693 1986
-
S. Luryi and F. Capasso, “Resonant tunneling of two dimensional electrons through a quantum wire: A negative transconductance device,” Appl. Phys. Lett., vol. 47, p. 1347, 1985; also. Erratum. Appl. Phys. Lett., vol. 48, p. 1693, 1986.
-
(1986)
Appl. Phys. Lett
, vol.47
, pp. 1347
-
-
Luryi, S.1
Capasso, F.2
-
47
-
-
0023296050
-
Resonant tunneling gate field-effect transistor
-
F. Capasso, S. Sen, F. Beltram, and A. Y. Cho, “Resonant tunneling gate field-effect transistor,” Electron. Lett., vol. 23, p. 225, 1987.
-
(1987)
Electron. Lett
, vol.23
, pp. 225
-
-
Capasso, F.1
Sen, S.2
Beltram, F.3
Cho, A.Y.4
-
48
-
-
0023400948
-
The resonant tunneling field-effect transistor: A new negative transconductance device
-
S. Sen, F. Capasso, F. Beltram, and A. Y. Cho, “The resonant tunneling field-effect transistor: A new negative transconductance device,” IEEE Trans. Electron Devices, vol. ED-34, p. 1768, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 1768
-
-
Sen, S.1
Capasso, F.2
Beltram, F.3
Cho, A.Y.4
-
49
-
-
36549094481
-
Negative transconductance resonant tunneling field effect transistor
-
F. Capasso, S. Sen, and A. Y. Cho, “Negative transconductance resonant tunneling field effect transistor.” Appl. Phys. Lett., vol. 51, p. 526, 1987.
-
(1987)
Appl. Phys. Lett
, vol.51
, pp. 526
-
-
Capasso, F.1
Sen, S.2
Cho, A.Y.3
-
50
-
-
0022250891
-
Resonant tunneling transistors with controllable negative differential resistance
-
A. R. Bonnefoi, T. C. McGill, and R. D. Burnham, “Resonant tunneling transistors with controllable negative differential resistance, IEEE Electron Device Lett., vol. EDL-6, p. 636, 1985.
-
(1985)
IEEE Electron Device Lett
, vol.EDL-6
, pp. 636
-
-
Bonnefoi, A.R.1
McGill, T.C.2
Burnham, R.D.3
-
51
-
-
0001484451
-
Experimental realization of a resonant tunneling transistor
-
T. K. Woodward, T. C. McGill, and R. D. Burnham. “Experimental realization of a resonant tunneling transistor,” Appl. Phys. Lett., vol. 50, 451, 1987.
-
(1987)
Appl. Phys. Lett
, vol.50
, Issue.451
-
-
Woodward, T.K.1
McGill, T.C.2
Burnham, R.D.3
-
52
-
-
0000409504
-
Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor
-
T. K. Woodward, T. C. McGill, H. F. Chung, and R. D. Burnham, “Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor,” Appl. Phys. Lett., vol. 51, p. 1542, 1987.
-
(1987)
Appl. Phys. Lett
, vol.51
, pp. 1542
-
-
Woodward, T.K.1
McGill, T.C.2
Chung, H.F.3
Burnham, R.D.4
-
53
-
-
0023984062
-
Applications of resonant-tunneling field-effect transistors
-
“Applications of r esonant-tunneling field-effect transistors,” IEEE Electron Device Lett., vol. 9. p. 122. 1988.
-
(1988)
IEEE Electron Device Lett
, vol.9
, pp. 122
-
-
-
54
-
-
0343227873
-
Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistor
-
F. Beltram, F. Capasso, S. Luryi. S. N. G. Chu. and A. Y. Cho, “Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistor.” Appl. Phys. Lett., vol. 53. p. 219.
-
Appl. Phys. Lett
, vol.53
, pp. 219
-
-
Beltram, F.1
Capasso, F.2
Luryi, S.3
Chu, S.N.G.4
Cho, A.Y.5
-
55
-
-
0005140105
-
Inverted base-collector collector tunnel transistors
-
A. R. Bonnefoi, D. H. Chow, and T. C. McGill, “Inverted base-collector collector tunnel transistors,” Appl. Phys. Lett., vol. 47, p. 888, 1985.
-
(1985)
Appl. Phys. Lett
, vol.47
, pp. 888
-
-
Bonnefoi, A.R.1
Chow, D.H.2
McGill, T.C.3
-
56
-
-
36549091403
-
Quantum capacitance devices
-
S. Luryi, “Quantum capacitance devices.” Appl. Phys. Lett., vol. 52. p. 501, 1988.
-
(1988)
Appl. Phys. Lett
, vol.52
, pp. 501
-
-
Luryi, S.1
-
58
-
-
30244510637
-
Observation of Bloch conduction perpendicular to the interfaces in a superlattice bipolar transistor
-
J. F. Palmier et al., “Observation of Bloch conduction perpendicular to the interfaces in a superlattice bipolar transistor.” Appl. Phys. Lett., vol. 49, p. 1260, 1986.
-
(1986)
Appl. Phys. Lett
, vol.49
, pp. 1260
-
-
Palmier, J.F.1
-
59
-
-
0023531745
-
The resonant hot electron transfer amplifier: A continuum resonance device
-
C. S. Lent, “The resonant hot electron transfer amplifier: A continuum resonance device,” Superlattices and Microstructures. vol. 3. 387, 1987.
-
(1987)
Superlattices and Microstructures
, vol.3
, pp. 387
-
-
Lent, C.S.1
-
60
-
-
0024719262
-
Continuum miniband superlattice-base transistor with graded-gap electron injector
-
F. Beltram, F. Capasso, A. L. Hutchinson, and R. J. Malik. “Continuum miniband superlattice-base transistor with graded-gap electron injector,” Electron. Lett., vol. 25, p. 1219. 1989.
-
(1989)
Electron. Lett
, vol.25
, pp. 1219
-
-
Beltram, F.1
Capasso, F.2
Hutchinson, A.L.3
Malik, R.J.4
|