Co-Integration of Resonant Tunneling and Double Heterojunction Bipolar Transistors on InP

IEEE Electron Device Letters

Volumn 14, Issue 10, 1993, Pages 472-474

  Seabaugh, Alan C ^a   Beam, Edward A ^a   Taddiken, Albert H ^a   Randall, John N ^a   Kao, Yung Chung ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRON RESONANCE; ELECTRON TUNNELING; GAIN MEASUREMENT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SUBSTRATES;

DIFFERENTIAL CURRENT GAIN; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DBHT'S); PEAK TO VALLEY CURRENT RATIOS (PVR'S); RESONANT PEAK CURRENT DENSITY; RESONANT TUNNELING BIPOLAR TRANSISTORS (RTBT'S);

BIPOLAR TRANSISTORS;

EID: 0027684059     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.244734     Document Type: Article

References (10)

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