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Volumn 44, Issue 12, 1997, Pages 2290-2294

The effect of body contact series resistance on soi cmos amplifier stages

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; OHMIC CONTACTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY;

EID: 0031358067     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644655     Document Type: Article
Times cited : (19)

References (11)
  • 1
    • 0030414086 scopus 로고    scopus 로고
    • Accurate measurement of pass-transistor leakage current in SOI MOSFET's in Proc. 1996 IEEE Int
    • F. Assaderaghi et al. Accurate measurement of pass-transistor leakage current in SOI MOSFET's in Proc. 1996 IEEE Int. SOI Conf. Oct. 1996.
    • SOI Conf. Oct. 1996.
    • Assaderaghi, F.1
  • 3
    • 33747698874 scopus 로고    scopus 로고
    • Floating body effects in 0. 15-μm partially-depleted SOI MOSFET's below 1 V in Proc.1996 IEEE Int
    • T. Saraya et al. Floating body effects in 0. 15-μm partially-depleted SOI MOSFET's below 1 V in Proc.1996 IEEE Int. SOI Conf. Oct. 1996.
    • SOI Conf. Oct. 1996.
    • Saraya, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.