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Volumn 25, Issue 1, 1990, Pages 282-288

A Radiation-Hard AGC Stabilized SOS Crystal Oscillator

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE - SILICON ON SAPPHIRE TECHNOLOGY;

EID: 0025387118     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.50315     Document Type: Article
Times cited : (13)

References (9)
  • 1
    • 84941861125 scopus 로고
    • An investigation into the radiation hardness of the MEDL 3μ CMOS-SOS technology
    • D. J. Mead and J. Hine, “An investigation into the radiation hardness of the MEDL 3μ CMOS-SOS technology.” presented at the Workshop, Snowmass. CO, 1987.
    • (1987) presented at the Workshop, Snowmass. CO
    • Mead, D.J.1    Hine, J.2
  • 2
    • 0016574231 scopus 로고
    • Properties of EFSI MOS transistors due to the floating substrate and the finite volume
    • Nov.
    • J. Tihany and H. Schlotterer, “Properties of EFSI MOS transistors due to the floating substrate and the finite volume,” IEEE Trans. Electron Devices. vol. ED-22. no. 11, pp. 1017–1023. Nov. 1975.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , Issue.11 , pp. 1017-1023
    • Tihany, J.1    Schlotterer, H.2
  • 4
    • 0017905150 scopus 로고
    • SOS device radiation effects and hardening
    • Aug.
    • B. L. Buchanan, D. A. Neaman, and W. M. Shedd, “SOS device radiation effects and hardening.” IEEE Trans. Electron Devices, vol. ED-25, no. 8, pp. 959–979, Aug. 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , Issue.8 , pp. 959-979
    • Buchanan, B.L.1    Neaman, D.A.2    Shedd, W.M.3
  • 5
    • 0020091418 scopus 로고
    • Conditions for start-up in crystal oscillators
    • Feb.
    • M. A. Unkrich and R. G. Meyer. “Conditions for start-up in crystal oscillators,” IEEE J. Solid-State Circuits, vol. SC-17, no. 1, pp. 87–90, Feb. 1982.
    • (1982) IEEE J. Solid-State Circuits , vol.SC-17 , Issue.1 , pp. 87-90
    • Unkrich, M.A.1    Meyer, R.G.2
  • 6
    • 0023362111 scopus 로고
    • High performance crystal oscillator circuits: Theory and application
    • June
    • E. A. Vittoz, M. G. R. Degrauwe, and S. Bitz, “High performance crystal oscillator circuits: Theory and application,” IEEE J. Solid-State Circuits, vol. 23. no. 3, pp. 774–783, June 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 774-783
    • Vittoz, E.A.1    Degrauwe, M.G.R.2    Bitz, S.3
  • 7
    • 84937744575 scopus 로고
    • Modelling and simulation of insulated gate field effect transistor switching circuits
    • Sept.
    • H. Shichmann and D. Hodges “Modelling and simulation of insulated gate field effect transistor switching circuits.” IEEE J. Solid-State Circuits, vol. SC-3, no. 3. pp. 285–289, Sept. 1968.
    • (1968) IEEE J. Solid-State Circuits , vol.SC-3 , Issue.3 , pp. 285-289
    • Shichmann, H.1    Hodges, D.2
  • 8
    • 84939012101 scopus 로고
    • High frequency CMOS switched capacitor filters for communication applications
    • Feb.
    • T. C. Choi, R. T. Kaneshiro. R. Brodersen, and P. R. Gray. “High frequency CMOS switched capacitor filters for communication applications.” in ISSCC Dig. Tech. Papers, Feb. 1983, pp. 246–247.
    • (1983) ISSCC Dig. Tech. Papers , pp. 246-247
    • Choi, T.C.1    Kaneshiro, R.T.2    Brodersen, R.3    Gray, P.R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.