An SOI-DRAM with Wide Operating Voltage Range by CMOS/SIMOX Technology

IEEE Journal of Solid-State Circuits

Volumn 29, Issue 11, 1994, Pages 1323-1329

  Hirose, Masakazu ^b   Tsuruda, Takahiro ^a   Kazuyasu, K ^a   Hidaka, Hideto ^a   Eimori, Takahisa ^a   Oashi, Toshiyuki ^a   Yamaguchi, Yasuo ^a   Iwamatsu, Toshiaki ^a   Arimoto, Kazutami ^a   Fujishima, F ^a   Inoue, Yasuo ^a   Nishimura, Tadashi ^a   Yoshihara, Tsutomu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Kita Itami Works Mitsubishi Electric Corporation Itami ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK ANALYSIS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR STORAGE; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THICK FILMS;

BODY SYNCHRONIZED SENSING SCHEME; DYNAMIC RANDOM ACCESS MEMORY; FLOATING BODY EFFECT; SEPARATION BY IMPLANTED OXYGEN (SIMOX);

RANDOM ACCESS STORAGE;

EID: 0028542559     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.328631     Document Type: Article

References (9)

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5. K. Suma et al., “An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology,” ISSCC Dig. Tech. Papers, pp. 138-139, 1994.
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