Accurate measurement of pass-transistor leakage current in SOI MOSFETs

IEEE International SOI Conference

Volumn , Issue , 1996, Pages 66-67

  Assaderaghi, F ^a   Shahidi, G ^a   Wagner, L ^a   Hsieh, M ^a   Pelella, M ^a   Chu, S ^a   Dennard, R ^a   Davari, B ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELD EFFECTS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

PASS TRANSISTOR LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 0030414086     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.1996.552496     Document Type: Conference Paper

References (4)