-
3
-
-
0021505966
-
-
Sov. Phys. Semicon. 18, 1176-1178 (1984).
-
O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konadova, and V. G. Litovchenko, Model of the radiation-stimulated ordering effect in III-V semiconductors, Sov. Phys. Semicon. 18, 1176-1178 (1984).
-
Model of the Radiation-stimulated Ordering Effect in III-V Semiconductors
-
-
Yu Borkovskaya, O.1
Dmitruk, N.L.2
Konadova, R.V.3
Litovchenko, V.G.4
-
4
-
-
0025660893
-
-
IEEE Trans. Nucl. Sei. 37, 1726-1731 (1990).
-
A. L. Barry, R. Maxseimer, R. Wojcik, M. A. Brière, and D. Bräunig, An improved displacement damage monitor, IEEE Trans. Nucl. Sei. 37, 1726-1731 (1990).
-
An Improved Displacement Damage Monitor
-
-
Barry, A.L.1
Maxseimer, R.2
Wojcik, R.3
Brière, M.A.4
Bräunig, D.5
-
6
-
-
0030368616
-
-
IEEE Trans. Nucl. Sei. 43, 2601-2608 (1996).
-
S. M. Khanna, A. Houdayer, A. Jorio, C. Carlone, M. Parenteau, and J. W. Gerdes Jr., Nuclear radiation displacement damage prediction in gallium arsenide through low temperature photoluminescence measurements, IEEE Trans. Nucl. Sei. 43, 2601-2608 (1996).
-
A. Houdayer, A. Jorio, C. Carlone, M. Parenteau, and J. W. Gerdes Jr., Nuclear Radiation Displacement Damage Prediction in Gallium Arsenide Through Low Temperature Photoluminescence Measurements
-
-
Khanna, S.M.1
-
7
-
-
0029516285
-
-
IEEE Trans. Nucl. Sei. 42, 2095-2103 (1995).
-
S. M. Khanna, A. Jorio, C. Carlone, M. Parenteau, A. Houdayer, and J. W. Gerdes Jr., Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide, IEEE Trans. Nucl. Sei. 42, 2095-2103 (1995).
-
Particle Dependence of the Gallium Vacancy Production in Irradiated N-type Gallium Arsenide
-
-
Khanna, S.M.1
Jorio, A.2
Carlone, C.3
Parenteau, M.4
Houdayer, A.5
Gerdes Jr., J.W.6
-
8
-
-
0003879237
-
-
in Semiconductors and Semimetals, Vol. 39, Academic Press, Chap. 2, pp. 102-108 (1993).
-
R. K. Ahrenkiel, Minority carriers in III/V semiconductors, in Semiconductors and Semimetals, Vol. 39, Academic Press, Chap. 2, pp. 102-108 (1993).
-
Minority Carriers in III/V Semiconductors
-
-
Ahrenkiel, R.K.1
-
9
-
-
0005244812
-
-
Appl. Phys. Lett. 50, 1307-1309 (1987).
-
J. Shah, T. C. Damen, B. Devaud, and D. Block, Subpicosecond luminescence spectroscopy using sum frequency generation, Appl. Phys. Lett. 50, 1307-1309 (1987).
-
T. C. Damen, B. Devaud, and D. Block, Subpicosecond Luminescence Spectroscopy Using Sum Frequency Generation
-
-
Shah, J.1
-
11
-
-
0011872378
-
-
IEEE Trans. Nucl. Sei. 41, 1937-1949 (1994).
-
A. Jorio, M. Parenteau, M. Aubin, C. Carlone, S. M. Khanna, and J. W. Gerdes Jr., A mobility study of the radiation induced order effect in gallium arsenide, IEEE Trans. Nucl. Sei. 41, 1937-1949 (1994).
-
S. M. Khanna, and J. W. Gerdes Jr., A Mobility Study of the Radiation Induced Order Effect in Gallium Arsenide
-
-
Jorio, A.1
Parenteau, M.2
Aubin, M.3
Carlone, C.4
-
12
-
-
0001260027
-
-
J. Appl. Phys 78, 3686-3690 (1995).
-
S. T. Lai, D. Alexiev, and B. D. Nener, Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiation, J. Appl. Phys 78, 3686-3690 (1995).
-
Comparison between Deep Level Defects in GaAs Induced by Gamma, 1 MeV Electron, and Neutron Irradiation
-
-
Lai, S.T.1
Alexiev, D.2
Nener, B.D.3
-
13
-
-
36449004217
-
-
J. Appl. Phys. 73, 640-647 (1993).
-
S. T. Lai, B. D. Nener, L. Faraone, A. G. Nassibian, and M. A. C. Hotchkis, Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons, J. Appl. Phys. 73, 640-647 (1993).
-
B. D. Nener, L. Faraone, A. G. Nassibian, and M. A. C. Hotchkis, Characterization of Deep-level Defects in GaAs Irradiated by 1 MeV Electrons
-
-
Lai, S.T.1
-
14
-
-
0027853280
-
-
IEEE Trans. Nucl. Sei. 40, 1350-1359 (1993).
-
S. M. Khanna, C. Rejeb, A. Jorio, M. Parenteau, C. Carlone, and J. W. Gerdes Jr., Electron and neutron radiation-induced order effect in gallium arsenide, IEEE Trans. Nucl. Sei. 40, 1350-1359 (1993).
-
C. Rejeb, A. Jorio, M. Parenteau, C. Carlone, and J. W. Gerdes Jr., Electron and Neutron Radiation-induced Order Effect in Gallium Arsenide
-
-
Khanna, S.M.1
-
15
-
-
0001475373
-
-
J. Appl. Phys. 74,2310-2317(1993).
-
A. Jorio, C. Rejeb, M. Parenteau, C. Carlone, and S. M. Khanna, Radiation induced carrier enhancement and intrinsic defect transformation in n-GaAs, J. Appl. Phys. 74,2310-2317(1993).
-
M. Parenteau, C. Carlone, and S. M. Khanna, Radiation Induced Carrier Enhancement and Intrinsic Defect Transformation in N-GaAs
-
-
Jorio, A.1
Rejeb, C.2
-
17
-
-
0021517639
-
-
J. Appl. Phys. 56, 2655-2657 (1989).
-
G. M. Martin, E. Estève, P. Langlade, and S. MakramEbeid, Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materials, J. Appl. Phys. 56, 2655-2657 (1989).
-
Kinetics of Formation of the Midgap Donor EL2 in Neutron Irradiated GaAs Materials
-
-
Martin, G.M.1
Estève, E.2
Langlade, P.3
Makramebeid, S.4
-
18
-
-
0000878061
-
-
Phys. Rev. B50, 1557-1566 (1994).
-
A. Jorio, A. Wang, M. Parenteau, C. Carlone, N. L. Rowell, and S. M. Khanna, Optical identification of the gallium vacancy in neutron-irradiated gallium arsenide, Phys. Rev. B50, 1557-1566 (1994).
-
Optical Identification of the Gallium Vacancy in Neutron-irradiated Gallium Arsenide
-
-
Jorio, A.1
Wang, A.2
Parenteau, M.3
Carlone, C.4
Rowell, N.L.5
Khanna, S.M.6
-
19
-
-
0001513444
-
-
J. Appl. Phys. 80, 1364-1369 (1996).
-
A. Jorio, C. Carlone, M. Parenteau, C. Aktik, and N. L. Rowell, Formation of EL2, AsGa and U band in irradiated GaAs: Effects of annealing, J. Appl. Phys. 80, 1364-1369 (1996).
-
Formation of EL2, AsGa and U Band in Irradiated GaAs: Effects of Annealing
-
-
Jorio, A.1
Carlone, C.2
Parenteau, M.3
Aktik, C.4
Rowell, N.L.5
-
20
-
-
0027844647
-
-
IEEE Trans. Nucl. Sei. 40, 1372-1379 (1993).
-
G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, Damage correlations in semiconductors exposed to gamma, electron and proton radiations, IEEE Trans. Nucl. Sei. 40, 1372-1379 (1993).
-
Damage Correlations in Semiconductors Exposed to Gamma, Electron and Proton Radiations
-
-
Summers, G.P.1
Burke, E.A.2
Shapiro, P.3
Messenger, S.R.4
Walters, R.J.5
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