Time-resolved spectroscopy of irradiated n-GaAs

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 1849-1855

  Parenteau, M ^a   Carlone, C ^a   Morris, D ^b   Khanna, S M ^b  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b DEPARTMENT OF NATIONAL DEFENCE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALPHA PARTICLES; ELECTRONS; GAMMA RAYS; ION BOMBARDMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEUTRON IRRADIATION; PHOTOLUMINESCENCE; RADIATION DAMAGE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

BAND TO BAND RECOMBINATION PROCESS; TIME RESOLVED SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031342647     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658952     Document Type: Article

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