Effects of Electron Beam Irradiation on Transient Photoluminescence Measurements of GaAs and AlGaAs Double Heterostructures

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 2058-2065

  Moss, Steven C ^a   Halle, Linda F ^b   Marvin, Dean C ^b  

^a AEROSPACE CORPORATION   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HOT CARRIERS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; RADIATION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SOLAR CELLS;

EFFECTIVE MINORITY CARRIER LIFETIME; ELECTRON BEAM IRRADIATION; RADIATION FLUENCE; TRANSIENT PHOTOLUMINESCENCE;

ELECTRON BEAMS;

EID: 0029546523     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489253     Document Type: Article

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