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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6475-6480

Epitaxial growth of TiSi2 (C49) on (001)Si by rapid thermal annealing

(2) Wang, Li Ming a Wu, Shinn Tyan a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

Author keywords

C49; Epitaxy; Rapid thermal annealing; Self aligned suicide; Supperlattice mismatch

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); METALLIC SUPERLATTICES; SILICON; SPUTTERING; SUBSTRATES; TITANIUM ALLOYS; X RAY CRYSTALLOGRAPHY;

SUPERLATTICE MISMATCH; TITANIUM SILICIDES;

METALLIC FILMS;

EID: 0031246021 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.6475 Document Type: Article

Times cited : (8)

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