Suppression of the phase transition to C54 TiSi2 due to epitaxial growth of C49 TiSi2 on Si(001) substrates in silicidation process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 242-246

  Komiya, Satoshi ^a   Tomita, Hirofumi ^a   Ikeda, Kazuto ^a   Horii, Yoshimasa ^a   Nakamura, Tomoji ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Epitaxy; Grazing incidence X ray diffraction; Phase transition; Synchrotron radiation; TiSi2

Indexed keywords

EPITAXIAL GROWTH; FABRICATION; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; SILICON; SYNCHROTRON RADIATION; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS; VACUUM; X RAY DIFFRACTION;

GRAZING INCIDENCE X RAY DIFFRACTION; SILICIDATION PROCESS; SILICON SUBSTRATES; TITANIUM FILMS; ULTRAHIGH VACUUM;

PHASE TRANSITIONS;

EID: 0029754920     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.242     Document Type: Article

References (22)

1. L. A. Clevenber and H. W. Mann: Mater. Res. Soc. Symp. Proc. 320 (1991) 15.
2. S. P. Murarka: Mater. Res. Soc. Symp. Proc. 320 (1994) 3.
3. R. Beyers and R. Sinclair: J. Appl. Phys. 57 (1985) 5240.
4. T. Nolan, R. Beyers and R. Sinclair: Mater. Res. Soc. Symp. Proc. 202 (1991) 95.
5. J. B. Lasky, J. S. Nakos, O. J. Cain and P. J. Geiss: IEEE Trans. Electron Devices 38 (1991) 262.
6. R. J. Nemanich, H. Jcon, C. A. Sukow, J. W. Honeycutt and G. A. Rozgonyi: Mater. Res. Soc. Symp. Proc. 260 (1992) 195.
7. R. Beyers, D. Coulman and P. Merchant: J. Appl. Phys. 61 (1987) 5110.
8. Y. Matsubara, T. Horiuchi and K. Okumura: Appl. Phys. Lett. 62 (1993) 2634.
9. R. W. Mann and L. A. Clevenger: J. Electrochem. Soc. 141 (1994) 1347.
10. T. P. Chow, W. Katz, R. Goehner and G. Smith: J. Electrochem. Soc. 132 (1985) 1914.
11. T. P. Chow, W. Katz and G. Smith: Appl. Phys. Lett. 46 (1985) 41.
12. H. Tomita, S. Komiya, Y. Horii and T. Nakamura: Jpn. J. Appl. Phys. Lett. 34 (1995) L876.
13. H. J. W. Van Houtum, I. J. M. M. Raaijmakers and T. J. M. Menting: J. Appl. Phys. 61 (1987) 3116.
14. Y. L. Corcoran and A. H. King: Mater. Res. Soc. Symp. Proc. 202 (1991) 137.
15. R. W. Mann, L. A. Clevenger and Q. Z. Hong: J. Appl. Phys. 73 (1993) 3566.
16. M. D. Naeem, W. A. Orr-Arienzo and J. G. Rapp: Appl. Phys. Lett. 66 (1995) 877.
17. M. S. Fung, H. C. Cheng and L. J. Chen: Appl. Phys. Lett. 47 (1985) 1312.
18. Y. Horii, H. Tomita and S. Komiya: Rev. Sci. Instrum. 66 (1995) 1370.
19. A. Catana, M. Heintze, F. Levy, P. E. Schmid and P. Stadelmann: 18th Int. Conf. Physics in Semiconductors, Stockholm 1986 (World Scientific, Singapore, 1987) p. 327.
20. K. Kawamura: private communication; samples fabricated by the same process as ours have been observed.
21. V. Probst, H. Schaber, A. Mitwalsky, H. Kabza and B. Hoffman: J. Appl. Phys. 70 (1991) 693.
22. F. La Via, V. Privitera and F. Rimini: Appl. Surf. Sci. 53 (1991) 377.