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Volumn 13, Issue 7, 1992, Pages 375-377

Graded-Gap a-SiC: H p-i-n Thin-Film Light-Emitting Diodes

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; SEMICONDUCTING FILMS; SILICON CARBIDE--AMORPHOUS; SILICON CARBIDE--HYDROGENATION;

EID: 0026896609     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192760     Document Type: Article
Times cited : (29)

References (10)
  • 1
    • 0020894765 scopus 로고
    • Polarization effects in AC electroluminescence of a-SiC:H
    • H. Matunami and M. Yoshimoto, “Polarization effects in AC electroluminescence of a-SiC:H,” J. Nort-Cryst. Solids, vol. 59, pp. 569–572, 1983.
    • (1983) J. Nort-Cryst. Solids , vol.59 , pp. 569-572
    • Matunami, H.1    Yoshimoto, M.2
  • 2
    • 0004600456 scopus 로고
    • Electroluminescence in hydrogenated amorphous silicon-carbon alloy
    • H. Munekata and H. Kukimoto, “Electroluminescence in hydrogenated amorphous silicon-carbon alloy,” Appl. Phys. Lett., vol. 42, no. 5, pp. 432–434, 1983.
    • (1983) Appl. Phys. Lett , vol.42 , Issue.5 , pp. 432-434
    • Munekata, H.1    Kukimoto, H.2
  • 3
    • 0022144495 scopus 로고
    • Amorphous silicon-carbide thin film light emitting diode
    • D. Kruangam, T. Endo, G. P. Wei, H. Okamoto, and Y. Hamakawa, “Amorphous silicon-carbide thin film light emitting diode,” Japan. J. Appl. Phys., vol. 24, no 10, p. L806, 1985.
    • (1985) Japan. J. Appl. Phys , vol.24 , Issue.10 , pp. L806
    • Kruangam, D.1    Endo, T.2    Wei, G.P.3    Okamoto, H.4    Hamakawa, Y.5
  • 4
    • 0001924925 scopus 로고
    • Amorphous silicon-carbide thin film light emitting diode
    • D. Kruangam et al., “Amorphous silicon-carbide thin film light emitting diode,” Optoelectron. Device Technologies, vol. 1, no. 1, pp. 67–84, 1986.
    • (1986) Optoelectron. Device Technologies , vol.1 , Issue.1 , pp. 67-84
    • Kruangam, D.1
  • 5
    • 0024908807 scopus 로고
    • Amorphous-SiC thin film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers
    • S. M. Paasche, T. Toyama, H. Okamoto, and Y. Hamakawa, “Amorphous-SiC thin film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers,” IEEE Trans. Electron Devices, vol. 36, no. 12, pp. 2895–2902, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.12 , pp. 2895-2902
    • Paasche, S.M.1    Toyama, T.2    Okamoto, H.3    Hamakawa, Y.4
  • 7
    • 84944999067 scopus 로고
    • Design and fabrication of amorphous graded-gap and quantum-well-injection p-i-n TFLED's
    • S. L. Ning, “Design and fabrication of amorphous graded-gap and quantum-well-injection p-i-n TFLED's,” M.S. thesis, National Central Univ., Taiwan, R. O. C., 1991.
    • (1991) M.S. thesis, National Central Univ., Taiwan, R. O. C
    • Ning, S.L.1
  • 8
    • 0012932944 scopus 로고
    • Toward a visible light display by amorphous SiC:H alloy system
    • Y. Hamakawa et al., “Toward a visible light display by amorphous SiC:H alloy system,” Optoelectron. Devices Technologies, vol. 4, no. 2, pp. 281–294, 1989.
    • (1989) Optoelectron. Devices Technologies , vol.4 , Issue.2 , pp. 281-294
    • Hamakawa, Y.1
  • 10
    • 0004005306 scopus 로고
    • Physics of Semiconductor Devices
    • 2nd ed. New York: Wiley
    • S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 403.
    • (1981) , pp. 403
    • Sze, S.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.