Electroluminescence in amorphous silicon p-i-n junctions

Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

Volumn 45, Issue 6, 1982, Pages 553-571

  Nashashibi, T S ^a,c   Austin, I G ^a   Searle, T M ^a   Gibson, R A ^b   Spear, W E ^b   Le Comber, P G ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF DUNDEE   (United Kingdom)

^c NONE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; SEMICONDUCTING SILICON - AMORPHOUS;

SEMICONDUCTOR DEVICES;

EID: 0020147081     PISSN: 13642812     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418638208227610     Document Type: Article

References (17)

1. Austin, I. G., Nashashibi, T. S., Searle, T. M., Le Comber, P. G., and Spear, W. E., 1979, J. non-crystalline Solids, 32, 373 and references therein.
2. Brodsky, M. H., and Leary, P. A., 1980, J. non-crystalline Solids, 35-36, 487.
3. Depinna, S. P., Cavenett, B. C., Searle, T. M., and Austin, I. G., 1981, Proceedings of the 9th International Conference on Liquid and Amorphous Semiconductors, Grenoble, edited by B. K. Chakravertv and D. Kaplan, J. Phys. Paris, 42, C4 Suppl. 10, 323.
4. Engemann, D., and Fischer, R., 1976, Structure and Excitations of Amorphous Solids, edited by G. Lucovsky and F. L. Galeener, Vol. 31 AIP Conference Proceedings (New York: American Institute of Physics), p. 37.
5. Gibson, R. A., Spear, W. E., Le Comber, P. G., and Snell, A. J., 1980, J. noncrystalline Solids, 35-36, 725.
6. Hughes, R. C., 1980, J. non-crystalline Solids, 35-36, 1005.
7. Le Comber, P. G., Loveland, R. J., Spear, W. E., and Vaughan, R. A., 1974, Proceedings of the 5th International Conference on Amorphous and Liquid Semiconductors, edited by J. Stuke and W. Brenig (London: Taylor & Francis), p. 245.
8. Nashashibi, T. S., Austin, I. G., and Searle, T. M., 1977 a, Phil. Mag., 20, 831; 1977 b, Proceedings of the 1th International Conference on Amorphous and Liquid Semiconductors, edited by W. E. Spear (Edinburgh: CICL), p. 392.
9. Nashashibi, T. S., Austin, I. G., Searle, T. M., Gibson, R. A., Le Comber, P. G., and Spear W. E., 1981 a, Proceedings of the 9th International Conference on Amorphous and Liquid Semiconductors, Grenoble, edited by B. K. Chakraverty and D. Kaplan, J. Phys., Paris, 42, C4 Suppl. 10, 467.
10. Nashashibi, T. S., Searle, T. M., Austin, I. G., Rhodes, A. J., Gibson, R. A., and Le Comber, P. G., 1981 b, Phil. Mag. B, 45, 573.
11. Pankove, J. T., and Carlson, D. E., 1976, Appl. Phys. Lett., 29, 620.
12. Pankove, J. I., Lampert, M. A., Hanak, J. J., and Berkeyheiser, J. E., 1977, RCA Rev., 38, 443.
13. Rehm, W., Engemann, D., Fischer, R., and Stuke, J., 1976, Proceedings of the 13th International Conference on the Physics of Semiconductors, edited by F. G. Fumi (Rome), p. 525.
14. Searle, T. M., Nashashibi, T. S., Austin, I. G., Devonshire, R. and Lockwood, G., 1979, Phil. Mag. B, 39, 389.
15. Snell, A. J., Spear, W. E., and Le Comber, P. G., 1981, Phil. Mag. B, 43, 407.
16. Street, R. A., Tsang, C., and Knights, J., 1978, Proceedings of the 14tjh International Conference on the Physics of Semiconductors, edited by B. L. H. Wilson, Conference Series No. 43 (London: Institute of Physics), p. 1139.
17. Tsang C, and Street R. A., 1979, Phys. Rev. B, 19, 3027.